TSS4B01G thru TSS4B04G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - UL Recognized File # E-326243 - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength of 2000VRMS - Reliable low cost construction - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TS4B MECHANICAL DATA Case：TS4B Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity：Polarity as marked on the body Mounting torque：5 in-lbs maximum Weight：4 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL TSS4B TSS4B TSS4B TSS4B 01G 02G 03G 04G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 V Maximum RMS voltage VRMS 35 70 140 280 V Maximum DC blocking voltage VDC 50 100 200 400 V Maximum average forward rectified current IF(AV) 4 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Rating for fusing (t<8.3mS) I2T 93 A2sec Maximum instantaneous forward voltage (Note 1) @4A VF Maximum DC reverse current at rated DC blocking voltage IR TJ=25 ℃ TJ=125℃ Maximum Reverse Recovery Time(Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Trr 0.98 V 1.3 5 500 35 uA 50 nS O RθJC 5.5 TJ - 55 to + 150 O C TSTG - 55 to + 150 O C C/W Note 1：Pulse test with PW=300u sec, 1% duty cycle Note 2 : Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. Document Number：DS_D1311039 Version:D13 TSS4B01G thru TSS4B04G Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING TS4B 20 / TUBE TS4B Forming TS4B 20 / TUBE TS4B Forming CODE C2 X0 TSS4B0xG (Note 1) Suffix "G" D2 X2 Note 1: "x" defines voltage from 50V (TSS4B01G) to 400V (TSS4B04G) EXAMPLE PREFERRED P/N PART NO. PACKING CODE TSS4B01G C2 TSS4B01G C2 TSS4B01G C2G TSS4B01G C2 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2- TYPICAL FORWARD CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 5 4 3 2 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 1 0 0 50 100 150 CASE TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT (A) 10 TSS4B01G-03G 1 TSS4B04G Pulse Width=300us 1% Duty Cycle 0.1 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 FIG. 4- TYPICAL REVERSE CHARACTERISTICS 175 1000 150 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS REVERSE CURRENT (uA) PEAK FORWARD SURGE CURRENT (A) 0.4 100 TJ=100℃ 10 TJ=25℃ 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number：DS_D1311039 Version:D13 TSS4B01G thru TSS4B04G Taiwan Semiconductor JUNCTION CAPACITANCE (pF) A FIG. 5- TYPICAL JUNCTION CAPACITANCE 1000 f=1.0MHz Vsig=50mVp-p 900 800 700 600 500 400 300 200 100 0 0.1 1 10 100 1000 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 24.70 25.30 0.972 0.996 B 0.90 1.10 0.035 0.043 C 1.80 2.20 0.071 0.087 D 14.70 15.30 0.579 0.602 E 3.96 4.37 0.156 0.172 F 17.00 18.00 0.669 0.709 G 7.30 7.70 0.287 0.303 H 3.30 3.70 0.130 0.146 I 3.10 3.40 0.122 0.134 J 9.30 9.70 0.366 0.382 K 1.52 1.73 0.060 0.068 L 0.55 0.75 0.022 0.030 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number：DS_D1311039 Version:D13