ESH3B thru ESH3D Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Ultra Fast Rectifiers - Glass passivated junction chip - Ideal for automated placement - Low profile package - Ultra fast recovery time for high efficiency - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA DO-214AB(SMC) Case：DO-214AB(SMC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity：Indicated by cathode band Weight：0.2 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current IF(AV) 3 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A VF 0.90 V Maximum instantaneous forward voltage (Note 1) @3A Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 5 uA 150 Maximum reverse recovery time (Note 2) Trr 20 nS Typical junction capacitance (Note 3) Cj 45 pF RθJL RθJA 12 47 TJ - 55 to + 175 O C TSTG - 55 to + 175 O C Typical thermal resistance Operating junction temperature range Storage temperature range O C/W Note 1：Pulse test with PW=300u sec, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number：DS_D1309021 Version:E13 ESH3B thru ESH3D Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING CODE R7 ESH3x (Note 1) R6 Suffix "G" M6 SMC 850 / 7" Plastic reel SMC 3000 / 13" Paper reel SMC 3000 / 13" Plastic reel Note 1: "x" defines voltage from 100V (ESH3B) to 200V (ESH3D) EXAMPLE PREFERRED P/N PART NO. PACKING CODE ESH3D R7 ESH3D R7 ESH3D R7G ESH3D R7 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) 3 2.5 2 1.5 1 RESISTER OR INDUCTIVE LOAD 0.5 0 0 25 50 75 100 125 150 175 INSTANTANEOUS FORWARD CURRENT (A) 10 3.5 1 Pulse Width=300us 1% Duty Cycle 0.1 0.4 LEAD TEMPERATURE (oC) 75 50 25 0 100 INSTANTANEOUS REVERSE CURRENT (uA) PEAK FORWARD SURGE CURRENT (A) 100 Document Number：DS_D1309021 1.2 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 8.3mS Single Half Sine Wave JEDEC Method NUMBER OF CYCLES AT 60 Hz 1 1000 125 10 0.8 FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1 0.6 TJ=125℃ 100 TJ=75℃ 10 1 TJ=25℃ 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:E13 ESH3B thru ESH3D Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 CAPACITANCE (pF) 75 50 25 f=1.0MHz Vsig=50mVp-p 0 0.1 1 10 REVERSE VOLTAGE (V) 100 PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol A B C D E Unit(mm) 3.3 2.5 6.8 4.4 9.4 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number：DS_D1309021 Version:E13