Central 2N5060 THRU 2N5064 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5060 series types are epoxy molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MARKING CODE: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL 2N5060 Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=60°C) Peak One Cycle Surge IT(RMS) 0.8 A ITSM 10 A Peak Forward Gate Current (tp=20µs) IGM 1.0 A Peak Reverse Gate Voltage VGM PGM 5.0 V 2.0 W Peak Gate Power Dissipation 30 2N5061 2N5062 2N5063 2N5064 UNITS 60 100 150 200 V Average Gate Power Dissipation (t=20µs) PG (AV) Storage Temperature Tstg 0.1 W -40 to +150 °C Junction Temperature -40 to +125 °C TJ ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, TC=125°C, RGK=1KΩ VD=7.0V, RL=100Ω, RGK=1KΩ 200 µA IGT IH VD=7.0V, RL=100Ω, RGK=1KΩ, TC=-65°C RGK=1KΩ 350 µA 5.0 mA IH VGT RGK=1KΩ, TC=-65°C 10 mA VD=7.0V, RL=100Ω VD=7.0V, RL=100Ω, TC=-65°C VD=7.0V, RL=100Ω, TC=125°C 0.8 V 1.2 V VGT VGT VTM dv/dt tq ITM=1.2A VD=0.67V x VDRM, TC=125°C, RGK=1KΩ VD=0.67V x VDRM, TC=125°C, RGK=1KΩ 1.0 µA 50 µA 0.1 V 1.7 30 V V/µs 200 µs R4 (25-August 2004) Central TM 2N5060 THRU 2N5064 Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) GATE 3) ANODE MARKING CODE: FULL PART NUMBER SYMBOL A (DIA) B C D E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) R4 (25-August 2004)