Central CSD-4M CSD-4N TM Semiconductor Corp. 4.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD -4M CSD -4N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) IT(RMS) 4.0 A ITSM 30 A I2t Value for Fusing (t=10ms) I 2t 4.5 A2s Peak Gate Power (tp=20µs) PGM PG (AV) 3.0 W Average Gate Power Dissipation 0.2 W Peak Gate Current (tp=20µs) IGM 1.2 A A/µs Critical Rate of Rise of On-State Current di/dt 50 Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +125 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM Rated VDRM, Rated VDRM, TYP VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C VD=12V, RL=10Ω 20 MAX UNITS 10 µA 200 µA 38 200 µA IT=50mA, RGK=1KΩ VD=12V, RL=10Ω 0.25 2.0 mA 0.55 0.8 V ITM=8.0A, tp=380µs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 1.6 1.8 V 10 V/µs R0 (20-May 2004) Central TM CSD-4M CSD-4N Semiconductor Corp. 4.0 AMP SCR 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0) R0 (20-May 2004)