CHD8-06 SURFACE MOUNT SILICON HYPERFAST POWER RECTIFIER 8.0 AMP, 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CHD8-06 is a high voltage silicon HyperFast power rectifier designed for extremely fast switching applications. MARKING: FULL PART NUMBER DPAK CASE APPLICATIONS: • Power factor correction • Motor control FEATURES: • High current capability • High surge capacity • HyperFast recovery time (22ns TYP) • High voltage MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM DC Blocking Voltage VR 600 600 V RMS Reverse Voltage VR(RMS) IO 420 V 8.0 A IFSM TJ, Tstg 70 A -65 to +175 °C ΘJL 5.0 °C/W MAX 10 UNITS μA 500 μA Average Forward Current (TL=100°C) Peak Forward Surge Current, tp=8.3ms Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS TYP VR=600V VR=600V, TA=150°C VF 1.9 CJ IF=8.0A VR=4.0V, f=1.0MHz trr IF=8.0A, VR=400V, di/dt=200A/μs 22 2.9 26 UNITS V V pF 25 ns R1 (24-July 2013) CHD8-06 SURFACE MOUNT SILICON HYPERFAST POWER RECTIFIER 8.0 AMP, 600 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Anode 2) Cathode 3) Anode 4) Cathode Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER R1 (24-July 2013) w w w. c e n t r a l s e m i . c o m CHD8-06 SURFACE MOUNT SILICON HYPERFAST POWER RECTIFIER 8.0 AMP, 600 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R1 (24-July 2013) w w w. c e n t r a l s e m i . c o m