PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 6,936 PRINCIPAL DEVICE TYPES CXT3150 CZT3150 R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP315V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m