PROCESS CP219 Power Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 83 x 83 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,670 PRINCIPAL DEVICE TYPES 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 CJD44H11 BACKSIDE COLLECTOR R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP219 Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m