TI TRF370333IRGET

TRF3703
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
0.4-GHz TO 4-GHz QUADRATURE MODULATOR
FEATURES
APPLICATIONS
•
•
VCC
GND
BBIN
BBIP
GND
GND
24
23
22
21
20
19
3
16
RF_OUT
LON
4
15
NC
GND
5
14
GND
NC
6
13
NC
12
LOP
GND
GND
11
17
GND
2
10
GND
BBQP
VCC
9
18
BBQN
1
8
NC
GND
•
RGE PACKAGE
(TOP VIEW)
7
•
•
•
•
•
•
•
Cellular Base Transceiver Station Transmit
Channel
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Wireless Local Loop
Wireless MAN Wideband Transceivers
NC
•
•
•
•
•
75-dBc Single-Carrier WCDMA ACPR at
–11-dBm Channel Power
Very Low Noise Floor: –163 dBm/Hz
OPI3 of 23 dBm
P1dB of 9 dBm
Unadjusted Carrier Feedthrough of –40 dBm
Unadjusted Side-Band Suppression of –40
dBc
Single Supply: 4.5 V–5.5 V Operation
Silicon Germanium Technology
TRF370333 With 3.3-V CM at I, Q Baseband
Inputs
TRF370315 With 1.5-V CM at I, Q Baseband
Inputs
P0024-04
DESCRIPTION
The TRF3703 is a very low-noise direct quadrature modulator, capable of converting complex modulated signals
from baseband or IF directly up to RF. The TRF3703 is ideal for high-performance direct RF modulation from
400 MHz up to 4 GHz. The modulator is implemented as a double-balanced mixer. The RF output block consists
of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50-Ω load
without any need of external components. The TRF3703 comes in two types, TRF370333 and TRF370315. The
TRF370333 and TRF370315 devices have different common-mode voltage ratings at the I, Q baseband inputs.
The TRF370333 requires a 3.3-V common-mode voltage, and the TRF370315 requires a 1.5-V common-mode
voltage.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2007, Texas Instruments Incorporated
TRF3703
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
VCC
GND
BBIN
BBIP
GND
GND
24
23
22
21
20
19
Functional Block Diagram
NC
1
18
VCC
GND
2
17
GND
LOP
3
16
RF_OUT
S
0/90
12
NC
GND
13
11
6
GND
NC
10
GND
BBQP
14
9
5
BBQN
GND
8
NC
GND
15
7
4
NC
LON
B0175-01
NOTE: NC = No connection
2
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BBIN
22
I
In-phase input
BBIP
21
I
In-phase input
BBQN
9
I
In-quadrature input
BBQP
10
I
In-quadrature input
GND
2, 5, 8,11,
12, 14, 17,
19, 20, 23
–
Ground
LON
4
I
Local oscillator input
LOP
3
I
Local oscillator input
NC
1, 6, 7, 13,
15
–
No connect
16
O
RF output
18, 24
–
Power supply
RF_OUT
VCC
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
Supply voltage range
Digital I/O voltage range
VALUE (2)
UNIT
–0.3 V to 6
V
–0.3 V to VI + 0.3
V
TJ
Operating virtual junction temperature range
–40 to 150
°C
TA
Operating ambient temperature range
–40 to 85
°C
Tstg
Storage temperature range
–65 to 150
°C
(1)
(2)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
VCC
Power-supply voltage
MIN
NOM
MAX
4.5
5
5.5
UNIT
V
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
RθJA
Thermal resistance, junction-to-ambient
RθJC
Thermal resistance, junction-to-case
High-K board, still air
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VALUE
UNIT
64.33
°C/W
49.3
°C/W
3
TRF3703
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC Parameters
ICC
Total supply current (1.5 V CM)
TA = 25°C
195
205
Total supply current (3.3 V CM)
TA = 25°C
210
235
mA
LO Input (50-Ω, Single-Ended)
fLO
LO frequency range
0.4
LO input power
–5
LO port return loss
0
4
GHz
12
dBm
15
dB
Baseband Inputs
VCM
I and Q input dc common voltage
BW
1-dB input frequency bandwidth
TRF370333
3.3
TRF370315
1.5
350
Input impedance, resistance
ZI(single
ended)
Input impedance, parallel
capacitance
TRF370333
Input impedance, resistance
Input impedance, parallel
capacitance
V
TRF370315
MHz
10
kΩ
3
pF
5
kΩ
3
pF
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 400 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
4
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
MAX
UNIT
–2.3
dB
9.4
dBm
23
dBm
62
dBm
Unadjusted
–37
dBm
Unadjusted
–39
dBc
20
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 900 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
MIN
Output rms voltage over input I (or Q) rms voltage
EVM
Error vector magnitude (rms)
UNIT
dB
9
dBm
23
dBm
63
dBm
Unadjusted
–37
dBm
Unadjusted
–42
dBc
9
dB
20
DC only to BB inputs, 13 MHz offset from fLO
–160.4
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–156.6
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–158.5
1 EDGE signal, Pout = –5 dBm
0.59%
1 EDGE signal, Pout = 0 dBm
0.63%
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15 dBm, 3rd harmonic of LO = –33 dBm (1)
(1)
MAX
–4.1
Output return loss
Output noise floor
TYP
dBm/Hz
1%
The second- and third-harmonic tests were made independently at each frequency.
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 1800 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
Error vector magnitude (rms)
UNIT
dB
dBm
23
dBm
55
dBm
Unadjusted
–40
dBm
Unadjusted
–47
dBc
8
dB
20
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–162.6
–160
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–159.4
1 EDGE signal, Pout = –5 dBm
0.66%
1 EDGE signal, Pout = 0 dBm
0.74%
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15.5 dBm, 3rd harmonic of LO = –30 dBm (1)
(1)
MAX
9.5
DC only to BB inputs, 13 MHz offset from fLO
EVM
TYP
–4.4
Output return loss
Output noise floor
MIN
Output rms voltage over input I (or Q) rms voltage
dBm/Hz
1%
The second- and third-harmonic tests were made independently at each frequency.
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2140 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
MIN
Output rms voltage over input I (or Q) rms voltage
ACPR
Adjacent-channel power
ratio
Alternate-channel power
ratio
MAX
UNIT
–4.5
dB
9.5
dBm
21
dBm
58
dBm
Unadjusted
–40
dBm
Unadjusted
–47
dBc
8.5
dB
18
Output return loss
Output noise floor
TYP
20-MHz offset from fLO; dc only to BB inputs
–163
20-MHz offset from fLO; 1 WCDMA signal;
Pin = –20.5 dBVrms (I and Q input)
–162
1 WCDMA signal; Pout = –13 dBm
–75.8
1 WCDMA signal; Pout = –9 dBm
–72
4 WCDMA signals; Pout = –23 dBm per carrier
–68
1 WCDMA signal; Pout = –13 dBm
–79
1 WCDMA signal; Pout = –9 dBm
dBm/Hz
dBc
–80.5
4 WCDMA signals; Pout = –23 dBm per carrier
dBc
–69
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2500 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
MAX
UNIT
–4.4
dB
9.5
dBm
21
dBm
63
dBm
Unadjusted
–38
dBm
Unadjusted
–47
dBc
18
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 3600 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
6
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
MAX
UNIT
–3.5
dB
9.5
dBm
23
dBm
63
dBm
Unadjusted
–41
dBm
Unadjusted
–45
dBc
20
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 4000 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
–4.5
MAX
UNIT
dB
9
dBm
22
dBm
50
dBm
Unadjusted
–37
dBm
Unadjusted
–40
dBc
19
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
TYPICAL CHARACTERISTICS
POUT
vs
BASEBAND VOLTAGE
POUT
vs
FREQUENCY AND TEMPERATURE
0
−1
10
–40°C
POUT − Output Power − dBm
POUT − Output Power at 1.8 GHz − dBm
15
5
0
−5
−10
−2
−3
−4
85°C
25°C
−5
−6
−7
−8
−15
LO = 0 dB
VCC = 5 V
−9
−10
−20
0.01
0.1
0
1
VBB − Baseband Voltage Single-Ended RMS − V
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G010
G023
Figure 1.
Figure 2.
POUT
vs
FREQUENCY AND SUPPLY VOLTAGE
POUT
vs
FREQUENCY AND LO POWER
0
0
5.5 V
−1
POUT − Output Power − dBm
POUT − Output Power − dBm
−1
−2
−3
−4
4.5 V
5V
−5
−6
−7
0 dBm
−2
5 dBm
−3
−4
–5 dBm
−5
−8
−6
LO = 0 dB
TA = 25°C
−9
−10
VCC = 5 V
TA = 25°C
−7
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G011
Figure 3.
8
G012
Figure 4.
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
TYPICAL CHARACTERISTICS (continued)
P1dB
vs
FREQUENCY AND TEMPERATURE
P1dB
vs
FREQUENCY AND SUPPLY VOLTAGE
14
12
LO = 0 dB
VCC = 5 V
12
5.5 V
10
10
5V
P1dB − dBm
P1dB − dBm
8
8
25°C
85°C
–40°C
6
4.5 V
6
4
4
2
2
LO = 0 dB
TA = 25°C
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G001
G002
Figure 5.
Figure 6.
P1dB
vs
FREQUENCY AND LO POWER
OIP3
vs
FREQUENCY AND TEMPERATURE
30
12
28
–5 dBm
10
26
5 dBm
24
8
0 dBm
OIP3 − dBm
P1dB − dBm
25°C
85°C
6
4
22
20
18
–40°C
16
14
2
VCC = 5 V
TA = 25°C
LO = 0 dBm
VCC = 5 V
12
10
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G014
G003
Figure 7.
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
OIP3
vs
FREQUENCY AND SUPPLY VOLTAGE
OIP3
vs
FREQUENCY AND LO POWER
30
30
28
+5 dBm
28
5V
26
26
24
24
22
22
OIP3 − dBm
OIP3 − dBm
4.5 V
20
5.5 V
18
20
16
14
14
LO = 0 dBm
TA = 25°C
0 dBm
18
16
12
–5 dBm
VCC = 5 V
TA = 25°C
12
10
10
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G015
G013
Figure 9.
Figure 10.
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND SUPPLY VOLTAGE
0
LO = 0 dB
POUT = –3 dBm
VCC = 5 V
−10
SS − Unadjusted Sideband Suppression − dBc
SS − Unadjusted Sideband Suppression − dBc
0
−20
−30
85°C
−40
25°C
−50
–40°C
−60
LO = 0 dB
POUT = –3 dBm
TA = 25°C
−10
−20
−30
5V
−40
5.5 V
−50
4.5 V
−60
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G007
Figure 11.
10
G008
Figure 12.
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SLWS184D – MARCH 2006 – REVISED JUNE 2007
TYPICAL CHARACTERISTICS (continued)
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND LO POWER
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
−20
VCC = 5 V
POUT = –3 dBm
TA = 25°C
−10
SS − Adjusted Sideband Suppression − dBc
SS − Unadjusted Sideband Suppression − dBc
0
−20
−30
–5 dBm
0 dBm
−40
−50
5 dBm
−40
−50
–40°C
25°C
−60
−70
85°C
−60
0
−30
Adj at 942.6 MHz
VCC = 5 V
−80
900
500 1000 1500 2000 2500 3000 3500 4000 4500
920
f − Frequency − MHz
940
960
980
G009
G016
Figure 13.
Figure 14.
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
−20
SS − Adjusted Sideband Suppression − dBc
SS − Adjusted Sideband Suppression − dBc
−20
−30
1000
f − Frequency − MHz
Adj at 1900 MHz
VCC = 5 V
−40
−50
85°C
−60
–40°C
25°C
−70
−30
Adj at 2140 MHz
VCC = 5 V
−40
85°C
−50
–40°C
−60
−70
25°C
−80
1850
1870
1890
1910
1930
1950
−80
2100
f − Frequency − MHz
2120
2140
2160
2180
2200
f − Frequency − MHz
G017
Figure 15.
G018
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND SUPPLY VOLTAGE
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
−156
−154
POUT = –5 dBm
LO = +5 dBm
Temp = 25°C
5.5 V
−158
−160
5V
−162
−164
4.5 V
−166
−168
0.0
−158
25°C/0 dBm
−160
−162
−164
–40°C/0 dBm
−166
0.5
1.0
85°C/0 dBm
−156
Noise at 13-MHz Offset − dBm/Hz
Room Temperature Noise − dBm/Hz
−154
1.5
2.0
2.5
3.0
3.5
POUT = 0 dBm
LO = +5 dBm
VCC = 5 V
−168
0.0
4.0
0.5
1.0
f − Frequency − GHz
1.5
2.0
2.5
3.0
3.5
G019
G020
Figure 17.
Figure 18.
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
−154
−154
−156
Noise at 13-MHz Offset − dBm/Hz
Noise at 13-MHz Offset − dBm/Hz
−156
85°C/–5 dBm
−158
25°C/–5 dBm
−160
−162
−164
−166
−168
0.0
–40°C/–5 dBm
POUT = –5 dBm
LO = +5 dBm
VCC = 5 V
0.5
1.0
POUT = –10 dBm
LO = +5 dBm
VCC = 5 V
−158
85°C/–10 dBm
−160
25°C/–10 dBm
−162
−164
−166
–40°C/–10 dBm
1.5
2.0
2.5
3.0
3.5
4.0
−168
0.0
f − Frequency − GHz
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
f − Frequency − GHz
G021
Figure 19.
12
4.0
f − Frequency − GHz
G022
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
UNADJUSTED CARRIER FEEDTHROUGH
vs
SUPPLY VOLTAGE
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
0
LO = 0 dB
TA = 25°C
−10
CS − Unadjusted Carrier Feedthrough − dBm
CS − Unadjusted Carrier Feedthrough − dBm
0
−20
5V
−30
5.5 V
−40
−50
4.5 V
−60
−70
−80
LO = 0 dB
VCC = 5 V
−10
−20
−30
85°C
−40
−50
25°C
−60
–40°C
−70
−80
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G025
Figure 21.
G026
Figure 22.
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APPLICATION INFORMATION AND EVALUATION BOARD
Basic Connections
•
•
•
•
•
•
•
•
•
14
See Figure 23 for proper connection of the TRF3703 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown
on pins 4, 5, 6, and 7.
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).
This should be ac-coupled through a 100-pF capacitor.
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper level, 3.3 V for the TRF370333 or 1.5 V for the
TRF370315.
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal.
This pin should also be ac-coupled through a 100-pF capacitor.
All NC pins can be left floating.
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APPLICATION INFORMATION AND EVALUATION BOARD (continued)
J3
IN
J4
IP
1
1
SMA_END
2
3
4
5
5
4
3
2
SMA_END
W1
2POS_JUMPER
W2
2POS_JUMPER
C6
+
R2
R3
0
0
C5
1000 pF
C7
+
4.7uF
19
NC
GND
GND
NC
8
5
4
3
2
7
100 pF
J5
QN
1
R5
0
0
16
R1
15
0
C3
1
SMA_END
100 pF
C8
C9
0.1 mF
(Note 1)
0.1 mF
(Note 1)
14
13
J6
QP
1
SMA_END
2
3
4
5
5
4
3
2
SMA_END
R4
J7
RF_OUT
17
GND
NC
18
2
3
4
5
GND
GND
21
20
IP
U1
TRF3703
NC
1
SMA_END
RF_OUT
GND
6
LOP
LON
1000 pF
12
C2
GND
QP
5
J2
LON
GND
11
4
VCCMOD
10
3
NC
QN
5
4
3
2
2
GND
1
100 pF
9
SMA_END
IN
1
GND
VCCLO
C1
23
24
J1
LOP
22
4.7 mF
C4
S0214-01
(1)
Do not install.
Figure 23. TRF3703 EVM Schematic
Submit Documentation Feedback
15
TRF3703
www.ti.com
SLWS184D – MARCH 2006 – REVISED JUNE 2007
APPLICATION INFORMATION AND EVALUATION BOARD (continued)
Figure 24 shows the top view of the TRF3703 EVM board.
GND
+5 V
+5 V
BBIN
GND
BBIP
LOP
RF_OUT
LON
50 W
BBQP
BBQN
K001
Figure 24. TRF3703 EVM Board Layout
Table 1. Bill of Materials for TRF3703 EVM
Value
Footprint
QTY
Part Number
Vendor
Digi-Key Number
REF DES
Tantalum
4.7-μF, 10-V,
10% capacitor
3216
2
T491A475K010AS
KEMET
399-1561-1-ND
C6, C7
1000-pF, 50-V,
5% capacitor
603
2
ECJ-1VC1H102J
Panasonic
PCC2151CT-ND
C4, C5
100-pF, 50-V,
5% capacitor
603
3
ECJ-1VC1H101J
Panasonic
PCC101ACVCT-ND
C1, C2, C3
Capacitor
603
0
16
Not
Installed
C8, C9
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TRF3703
www.ti.com
SLWS184D – MARCH 2006 – REVISED JUNE 2007
APPLICATION INFORMATION AND EVALUATION BOARD (continued)
Table 1. Bill of Materials for TRF3703 EVM (continued)
Value
Footprint
QTY
Part Number
ERJ-3GEY0R00V
Vendor
Panasonic
Digi-Key Number
P0.0GCT-ND
REF DES
0-Ω resistor,
1/10-W, 5%
603
5
TRF3703
24-QFN-PP4X4MM
1
SMA connectors SMA_END_
SMALL
6
16F3627
Newark
142-0711-821
J1, J2, J3,
J4, J5, J6,
J7
2POS_HEADER 2POS_JUMP
2
HTSW-150-07-L-S
SAMTEC
N/A
W1, W2
TI
Not
Installed
R1, R2, R3,
R4, R5
U1
GSM Applications
The TRF3703 is suited for GSM applications because of its high linearity and low noise level over the entire
recommended operating range. It also has excellent EVM performance, which makes it ideal for the stringent
GSM/EDGE applications.
WCDMA Applications
The TRF3703 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and
noise density are critically important. Using Texas instruments’ DAC568X series of high-performance
digital-to-analog converters as depicted in Figure 25, excellent ACPR levels were measured with one-, two-, and
four-WCDMA carriers. See Electrical Characteristics, fLO = 2140 MHz for exact ACPR values.
16
TRF3703
I/Q
Modulator
DAC5687
RF_OUT
16
CLK1
CLK2
VCXO
TRF3761
PLL
LO Generator
CDCM7005
Clock Gen
Ref Osc
B0176-01
Figure 25. Typical Transmit Setup Block Diagram
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17
TRF3703
www.ti.com
SLWS184D – MARCH 2006 – REVISED JUNE 2007
DEFINITION OF SPECIFICATIONS
Unadjusted Carrier Feedthrough
This specification measures the amount by which the local oscillator component is attenuated in the output
spectrum of the modulator relative to the carrier. This further assumes that the baseband inputs delivered to the
pins of the TRF3703 are perfectly matched to have the same dc offset (VCM). This includes all four baseband
inputs: I, I, Q, and Q. This is measured in dBm.
Adjusted (Optimized) Carrier Feedthrough
This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively
adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the
output spectrum. This is measured in dBm.
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the
output of the modulator, relative to the wanted sideband. This further assumes that the baseband inputs
delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. This
is measured in dBc.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted
around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc.
Suppressions Over Temperature
This specification assumes that the user has gone though the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when
temperature conditions change after the initial calibration is done.
Figure 26 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet. The graph assumes a baseband input of 50 kHz.
10
POUT
0
P − Power − dBm
−10
−20
3RD LSB
(dBc)
SBS
(dBc)
3RD LSB
LSB
(Undesired)
2ND USB
(dBc)
C
(dBm)
−30
−40
−50
−60
−70
2ND LSB
−80
−200 −150 −100 −50
USB
(Desired)
2ND USB
Carrier
0
3RD USB
50
100
150
200
f − Frequency Offset − kHz (Relative to Carrier)
G024
Figure 26. Graphical Illustration of Common Terms
18
Submit Documentation Feedback
PACKAGE OPTION ADDENDUM
www.ti.com
22-Jun-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TRF370315IRGER
ACTIVE
QFN
RGE
24
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TRF370315IRGET
ACTIVE
QFN
RGE
24
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TRF370333IRGER
ACTIVE
QFN
RGE
24
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TRF370333IRGERG4
ACTIVE
QFN
RGE
24
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TRF370333IRGET
ACTIVE
QFN
RGE
24
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TRF370333IRGETG4
ACTIVE
QFN
RGE
24
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jan-2008
TAPE AND REEL BOX INFORMATION
Device
Package Pins
Site
Reel
Diameter
(mm)
Reel
Width
(mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TRF370315IRGER
RGE
24
SITE 60
330
12
4.3
4.3
1.5
8
12
Q1
TRF370315IRGET
RGE
24
SITE 60
330
12
4.3
4.3
1.5
8
12
Q1
TRF370333IRGER
RGE
24
SITE 60
330
12
4.3
4.3
1.5
8
12
Q2
TRF370333IRGET
RGE
24
SITE 60
330
12
4.3
4.3
1.5
8
12
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jan-2008
Device
Package
Pins
Site
Length (mm)
Width (mm)
Height (mm)
TRF370315IRGER
RGE
24
SITE 60
342.9
345.9
20.64
TRF370315IRGET
RGE
24
SITE 60
342.9
345.9
20.64
TRF370333IRGER
RGE
24
SITE 60
342.9
345.9
20.64
TRF370333IRGET
RGE
24
SITE 60
342.9
345.9
20.64
Pack Materials-Page 2
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