2SC5536A Ordering number : ENA1092A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ (f=150MHz) 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings 20 V 12 V VEBO IC 2 V 50 mA 100 mW Junction Temperature PC Tj Storage Temperature Tstg 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7029A-002 • Package : SSFP • JEITA, JEDEC : SC-81 • Minimum Packing Quantity : 8,000 pcs./reel 2SC5536A-TL-H 1.4 0.3 0.25 Packing Type: TL 0.1 3 Marking 2 0.45 0.2 TL Electrical Connection 0.6 0.07 MA LOT No. 1 LOT No. 0.3 0.8 0 to 0.02 0.07 1.4 Unit VCBO VCEO 1 2 3 1 : Base 2 : Emitter 3 : Collector 3 1 SANYO : SSFP 2 http://semicon.sanyo.com/en/network 71112 TKIM/42110AB TKIM TC-00002325 No. A1092-1/7 2SC5536A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain min typ ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A hFE1 VCE=2V, IC=3mA VCE=2V, IC=50mA 80 VCE=2V, IC=3mA 1.0 hFE2 Gain-Bandwidth Product Ratings Conditions Output Capacitance fT Cob Reverse Transfer Capacitance Cre Forward Transfer Gain ⏐S21e⏐ Noise Figure NF Unit max 1.0 μA 10 μA 200 70 1.7 GHz 1.1 VCB=10V, f=1MHz 1.8 pF 0.8 2 13 VCE=2V, IC=3mA, f=150MHz pF 16 dB 1.8 3.0 dB Ordering Information Device Package Shipping memo SSFP 8,000pcs./reel Pb Free and Halogem Free 2SC5536A-TL-H IC -- VCE 60 IC -- VCE 20 140μA 18 Collector Current, IC -- mA 320μA 40 Collector Current, IC -- mA 400μA 360μA 50 280μA 240μA 200μA 30 160μA 20 120μA 80μA 10 40μA IB=0μA 0 0.5 0 1.0 1.5 2.0 2.5 Collector-to-Emitter Voltage, VCE -- V 100μA 14 80μA 12 60μA 10 8 40μA 6 20μA 4 2 IB=0μA 0 3.0 2 0 4 6 8 Collector-to-Emitter Voltage, VCE -- V IT14226 hFE -- IC 1000 120μA 16 10 IT14227 fT -- IC 2 Gain-Bandwidth Product, fT -- GHz 7 DC Current Gain, hFE 5 3 2 VCE=2V 1V 100 7 5 3 2 10 0.1 10 7 =2V V CE 1V 5 3 2 1.0 7 5 3 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 IT14228 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 IT01306 No. A1092-2/7 2SC5536A Cob -- VCB 5 Reverse Transfer Capacitance, Cre -- pF Output Capacitance, Cob -- pF 3 2 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 2 1.0 7 5 3 2 7 0.1 3 Forward Transfer Gain, ⏐S21e⏐2 -- dB 10 8 6 4 VC =2 E V 2 1V 0 3 5 7 1.0 2 3 5 7 2 10 3 IT01308 C 32 f=150MHz 2 Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I IT01307 NF -- IC 12 Noise Figure, NF -- dB f=1MHz 0.1 0.1 f=150MHz 28 24 20 V =2 E C V 16 1V 12 8 4 0 7 2 1.0 3 5 7 2 10 3 Collector Current, IC -- mA 5 7 100 IT01310 PC -- Ta 120 Collector Dissipation, PC -- mW Cre -- VCB 5 f=1MHz 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT01309 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01311 No. A1092-3/7 2SC5536A S Parameters (Common emitter) VCE=2V, IC=1mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.961 0.937 0.917 0.890 0.893 0.880 0.868 0.873 0.858 0.866 ∠S11 -26.3 -52.0 -72.8 -89.5 -100.7 -111.3 -122.4 -127.6 -135.4 -138.9 ⏐S21⏐ 3.67 2.90 2.69 2.47 2.23 1.93 1.83 1.58 1.52 1.31 ∠S21 162.9 148.5 135.6 125.0 116.6 108.8 102.9 96.8 92.7 87.3 ⏐S12⏐ 0.040 0.074 0.099 0.114 0.124 0.130 0.135 0.136 0.137 0.135 ∠S12 74.8 61.5 50.4 41.3 33.8 28.3 23.9 19.9 16.8 14.0 ⏐S22⏐ 0.980 0.938 0.890 0.843 0.803 0.785 0.747 0.747 0.720 0.724 ∠S22 -7.3 -13.4 -18.0 -21.5 -24.4 -26.5 -28.6 -30.5 -32.3 -34.3 ∠S11 -37.5 -68.6 -91.8 -108.7 -121.4 -130.6 -137.9 -143.8 -148.4 -152.5 ⏐S21⏐ 9.15 8.01 6.76 5.56 4.93 4.17 3.73 3.28 2.99 2.69 ∠S21 157.9 140.2 127.0 117.8 110.1 104.6 98.9 95.2 91.0 88.1 ⏐S12⏐ 0.038 0.064 0.080 0.088 0.095 0.098 0.098 0.100 0.098 0.100 ∠S12 69.9 54.0 43.3 35.6 30.8 27.4 24.8 23.0 22.2 21.3 ⏐S22⏐ 0.942 0.829 0.723 0.636 0.581 0.533 0.510 0.482 0.472 0.457 ∠S22 -15.0 -26.1 -32.9 -36.7 -39.1 -40.9 -42.2 -43.3 -44.6 -45.7 ∠S11 -64.8 -105.2 -126.7 -139.6 -147.8 -153.8 -158.8 -162.1 -165.3 -167.6 ⏐S21⏐ 22.70 16.71 12.55 9.94 8.10 6.88 5.96 5.25 4.70 4.24 ∠S21 145.6 125.0 113.3 106.2 101.0 96.9 93.4 90.7 88.2 85.9 ⏐S12⏐ 0.031 0.046 0.052 0.055 0.059 0.060 0.062 0.065 0.067 0.069 ∠S12 60.7 44.9 38.2 36.3 35.6 36.2 37.4 38.6 40.6 42.1 ⏐S22⏐ 0.825 0.605 0.462 0.371 0.314 0.276 0.248 0.228 0.215 0.204 ∠S22 -33.9 -53.9 -64.8 -71.4 -76.1 -79.7 -82.6 -85.1 -86.7 -88.6 ∠S11 -104.0 -137.6 -151.7 -159.5 -164.5 -168.1 -170.8 -173.0 -174.8 -176.5 ⏐S21⏐ 36.87 23.04 16.23 12.43 10.04 8.44 7.27 6.38 5.70 5.14 ∠S21 131.9 112.9 104.1 99.4 95.6 92.8 90.2 88.3 86.4 84.7 ⏐S12⏐ 0.022 0.030 0.034 0.038 0.042 0.045 0.050 0.055 0.059 0.064 ∠S12 54.3 44.3 45.3 47.4 50.8 53.9 56.5 58.3 60.5 61.5 ⏐S22⏐ 0.672 0.450 0.352 0.302 0.276 0.260 0.251 0.244 0.239 0.237 ∠S22 -59.9 -89.4 -106.7 -118.6 -127.0 -133.7 -138.8 -142.9 -145.6 -148.2 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.888 0.860 0.835 0.810 0.800 0.792 0.791 0.787 0.785 0.783 VCE=2V, IC=10mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.733 0.722 0.719 0.713 0.716 0.716 0.716 0.717 0.715 0.716 VCE=2V, IC=30mA, ZO=50Ω Freq(MHz) 50 100 150 200 250 300 350 400 450 500 ⏐S11⏐ 0.605 0.660 0.677 0.681 0.686 0.687 0.689 0.691 0.691 0.691 No. A1092-4/7 2SC5536A Embossed Taping Specification 2SC5536A-TL-H No. A1092-5/7 2SC5536A Outline Drawing 2SC5536A-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No. A1092-6/7 2SC5536A Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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