SANYO ENA1090A

2SC5374A
Ordering number : ENA1090A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5374A
VHF to UHF Band OSC,
High-Frequency Amplifier Applications
Features
•
•
High gain
: ⏐S21e⏐2=10.5dB typ (f=1GHz)
High cut-off frequency : fT=5.2GHz typ
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Conditions
Ratings
Unit
VCBO
VCEO
20
V
10
V
VEBO
IC
2
Junction Temperature
PC
Tj
Storage Temperature
Tstg
V
100
mA
100
mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7027A-002
Product & Package Information
0.1
3
Packing Type: TL
Marking
0.8
1.6
0.4
0.3
0.1 MIN
2SC5374A-TL-E
1.6
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
0.4
NA
LOT No.
2
LOT No.
1
0.2
TL
0.6
0 to 0.1
0.75
0.5 0.5
1 : Base
2 : Emitter
3 : Collector
Electrical Connection
3
SANYO : SMCP
1
2
http://www.sanyosemi.com/en/network/
822412 TKIM/O2809AB TKIM TC-00002118 No. A1090-1/8
2SC5374A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
VCB=10V, IE=0A
VEB=1V, IC=0A
hFE1
VCE=3V, IC=7mA
VCE=3V, IC=30mA
hFE2
Gain-Bandwidth Product
Output Capacitance
fT
Cob
Reverse Transfer Capacitance
Cre
Forward Transfer Gain
⏐S21e⏐
Noise Figure
NF
Ratings
Conditions
min
typ
110
1.0
μA
10
μA
180
100
VCE=3V, IC=7mA
3
5.2
GHz
1.0
VCB=3V, f=1MHz
2
Unit
max
1.5
pF
0.7
VCE=3V, IC=7mA, f=1GHz
8
pF
10.5
VCE=3V, IC=7mA, f=1GHz
dB
1.4
2.5
dB
Ordering Information
Device
2SC5374A-TL-E
Package
Shipping
memo
SMCP
3,000pcs./reel
Pb Free
IC -- VCE
35
IC -- VBE
32
VCE=3V
200μA
28
180μA
160μA
25
Collector Current, IC -- mA
Collector Current, IC -- mA
30
140μA
120μA
20
100μA
15
80μA
60μA
10
40μA
20μA
5
0
1
2
3
4
5
6
7
8
9
Collector-to-Emitter Voltage, VCE -- V
12
8
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
ITR08168
VCE=3V
f=1GHz
VCE=3V
Gain-Bandwidth Product, fT -- GHz
3
2
100
7
5
1.2
ITR08169
fT -- IC
2
5
DC Current Gain, hFE
16
10
hFE -- IC
7
20
4
IB=0μA
0
24
10
7
5
3
2
1.0
7
5
3
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC -- mA
5
7 100
2
ITR08170
7
1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7
ITR08171
No. A1090-2/8
2SC5374A
Cob -- VCB
3
Reverse Transfer Capacitance, Cre -- pF
1.0
7
5
3
2
0.1
5
3
2
7 1.0
3
2
5
2
7 10
Collector-to-Base Voltage, VCB -- V
7
5
3
2
0.1
7 0.1
VCE=3V
f=1GHz
6
4
2
0
5
7 1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
ITR08174
PC -- Ta
120
5
3
2
7 1.0
2
5
3
7
2
10
Collector-to-Base Voltage, VCB -- V
⏐S21e⏐2 -- I
ITR08172
8
Noise Figure, NF -- dB
1.0
3
NF -- IC
10
Collector Dissipation, PC -- mW
f=1MHz
2
7
7
7 0.1
3
ITR08173
C
14
Forward Transfer Gain, ⏐S21e⏐2 -- dB
Output Capacitance, Cob -- pF
2
3
Cre -- VCB
3
f=1MHz
VCE=3V
f=1GHz
12
10
8
6
4
2
0
7
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
ITR08175
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08176
No. A1090-3/8
2SC5374A
S Parameter
S11e
f=100MHz, 200MHz to 2000MHz(200MHz Step)
S21e
f=100MHz, 200MHz to 2000MHz(200MHz Step)
90°
j50
120°
j25
60°
j100
j150
150°
j200
j250
j10
VCE=5V
IC=20mA
VCE=3V
IC=7mA
30°
0.1GHz
2.0GHz
0
10
25
50
100 150 250 500
VCE=5V
IC=20mA
--j10
VCE=3V
IC=7mA
0.1GHz
VCE=1V
IC=3mA
VCE=1V
IC=3mA
±180°
--j250
--j200
--j150
12
16 20
0
--30°
--150°
--60°
--120°
--j50
--90°
ITR08177
S12e
f=100MHz, 200MHz to 2000MHz(200MHz Step)
j50
VCE=3V
IC=7mA
60°
j25
j150
30°
j200
j250
j10
VCE=1V
IC=3mA
0.05 0.10 0.15 0.20 0.25
±180°
j100
2.0GHz
VCE=5V
IC=20mA
0.1GHz
ITR06391
S22e
f=100MHz, 200MHz to 2000MHz(200MHz Step)
90°
150°
8
--j100
--j25
120°
4
2.0GHz
0
0
10
25
50
VCE=3V
IC=7mA
--j10
VCE=5V
IC=20mA
2.0GHz
--30°
--150°
100 150 250 500
VCE=1V
IC=3mA
0.1GHz
--j250
--j200
--j150
--j100
--j25
--60°
--120°
--90°
ITR06392
--j50
ITR06393
No. A1090-4/8
2SC5374A
S Parameters (Common emitter)
VCE=1V, IC=3mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.875
0.785
0.651
0.613
0.581
0.568
0.556
0.563
0.558
0.560
0.567
∠S11
-40.6
-71.6
-114.8
-136.9
-153.9
-164.2
-172.0
-178.1
175.4
168.9
163.1
⏐S21⏐
8.627
6.874
4.701
3.365
2.716
2.218
1.863
1.626
1.473
1.345
1.230
∠S21
152.3
132.5
107.3
92.8
81.9
73.4
66.2
59.6
53.9
48.1
42.5
⏐S12⏐
0.062
0.101
0.135
0.152
0.155
0.161
0.170
0.177
0.185
0.196
0.205
∠S12
67.9
52.1
37.1
31.1
29.9
30.0
30.5
32.7
35.4
37.4
38.0
⏐S22⏐
0.918
0.748
0.537
0.430
0.361
0.326
0.300
0.297
0.306
0.313
0.335
∠S22
-23.4
-41.7
-57.6
-65.6
-74.3
-80.2
-86.1
-92.3
-96.5
-100.6
-102.9
∠S11
-48.3
-83.7
-123.8
-145.3
-158.5
-169.1
-176.1
178.4
172.7
167.4
162.0
⏐S21⏐
16.232
12.431
7.607
5.401
4.155
3.425
2.849
2.511
2.237
2.016
1.844
∠S21
147.7
126.4
104.7
92.7
84.1
77.1
71.0
65.6
60.7
55.5
50.5
⏐S12⏐
0.039
0.061
0.081
0.094
0.106
0.121
0.136
0.152
0.167
0.185
0.200
∠S12
66.1
53.0
45.2
45.9
48.2
49.1
51.0
52.2
52.8
53.2
52.7
⏐S22⏐
0.862
0.673
0.438
0.333
0.290
0.270
0.253
0.239
0.240
0.245
0.248
∠S22
-27.2
-44.6
-59.1
-65.1
-68.7
-71.0
-74.7
-79.6
-82.8
-86.7
-90.0
∠S11
-66.4
-104.6
-140.3
-157.2
-168.4
-175.9
177.1
173.0
168.4
164.2
159.1
⏐S21⏐
26.381
17.543
9.835
6.805
5.210
4.194
3.518
3.077
2.730
2.459
2.249
∠S21
137.4
116.5
98.9
89.4
82.4
76.6
71.5
66.7
62.5
58.0
53.5
⏐S12⏐
0.029
0.041
0.058
0.074
0.092
0.110
0.129
0.148
0.166
0.186
0.203
∠S12
62.8
54.2
55.4
59.2
61.4
61.9
62.3
61.8
61.6
60.7
59.5
⏐S22⏐
0.748
0.531
0.322
0.246
0.213
0.199
0.191
0.184
0.181
0.186
0.192
∠S22
-36.3
-52.5
-62.7
-65.5
-68.6
-70.2
-72.9
-76.5
-80.9
-84.8
-87.3
VCE=3V, IC=7mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.789
0.670
0.552
0.522
0.504
0.488
0.478
0.481
0.478
0.492
0.489
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.643
0.530
0.459
0.447
0.440
0.434
0.437
0.437
0.438
0.439
0.444
No. A1090-5/8
2SC5374A
Embossed Taping Specification
2SC5374A-TL-E
No. A1090-6/8
2SC5374A
Outline Drawing
2SC5374A-TL-E
Land Pattern Example
Mass (g) Unit
0.003 mm
* For reference
Unit: mm
0.7
1.3
0.7
0.7
0.6
0.5
0.5
No. A1090-7/8
2SC5374A
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
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independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1090-8/8