UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 13N50 is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology. TO-220 1 TO-220F FEATURES * RDS(ON) =0.48Ω @VGS = 10V * Ultra low gate charge (typical 43nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13N50L-TA3-T 13N50G-TA3-T 13N50L-TF3-T 13N50G-TF3-T 13N50L- TF1-T 13N50G-TF1-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 TO-220F1 Package TO-220 TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 6 QW-R502-362.G 13N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 13 A Pulsed Drain Current (Note 2) IDM 52 A Avalanche Current (Note 2) IAR 13 A Single Pulsed Avalanche Energy (Note 3) EAS 810 mJ Repetitive Avalanche Energy (Note 2) EAR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 168 Power Dissipation (TC=25°C) PD W TO-220F/TO-220F1 48 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 9.3mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.74 2.58 UNIT °C/W °C/W 2 of 6 QW-R502-362.G 13N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 500 V VDS = 500V, VGS = 0V 10 μA 100 nA VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.5A 0.42 0.48 Ω DYNAMIC CHARACTERISTICS 1800 2300 pF Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS 245 320 pF f=1.0MHz Reverse Transfer Capacitance CRSS 25 35 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 40 90 nS Turn-On Rise Time tR 140 290 nS VDD =250V, ID =13A, RG =25Ω (Note 1,2) Turn-Off Delay Time tD(OFF) 100 210 nS Turn-Off Fall Time tF 85 180 nS Total Gate Charge QG 45 60 nC VDS=400V, ID=13A, Gate-Source Charge QGS 11 nC VGS=10 V (Note 1,2) Gate-Drain Charge QGD 22 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 13 A 1.4 V Maximum Continuous Drain-Source Diode IS 13 A Forward Current Maximum Pulsed Drain-Source Diode ISM 52 A Forward Current Reverse Recovery Time trr VGS = 0V, IS = 13A, 290 nS dIF / dt =100A/μs (Note 1) Reverse Recovery Charge QRR 2.6 μC Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating ambient temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-362.G 13N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-362.G 13N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-362.G 13N50 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 50 200 150 100 50 0 0 0 1 2 3 4 Gate Threshold Voltage, VTH (V) 5 Drain Current, ID (A) Drain Current, ID (A) 0 100 200 300 400 500 600 Drain-Source Breakdown Voltage, BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-362.G