FREESCALE MPR121QR2

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Freescale Semiconductor
Technical Data
MPR121
Rev 0, 9/2009
Advanced Information
Proximity Capacitive Touch
Sensor Controller
MPR121
MPR121 OVERVIEW
Capacitive Touch
Sensor Controller
The MPR121 is the second generation sensor controller after the initial
release of the MPR03x series devices. The MPR121 will feature
increased internal intelligence in addition to Freescale’s second
generation capacitance detection engine. Some of the major additions
include an increased electrode count, a hardware configurable I2C
address, an expanded filtering system with debounce, and completely
independent electrodes with auto-configuration built in. The device also
features a 13th simulated electrode that represents the simultaneous
charging of all the electrodes connected together to allow for increased
proximity detection in a touch panel or touch screen array.
Bottom View
20-PIN QFN
CASE 2059-01
Features
ELE8
ELE9
2
14
ELE6
SDA
3
13
ELE5
ADDR
4
12
ELE4
VREG
5
11
ELE3
Switch Replacements
Touch Pads
6
7
8
9
10
ELE2
ELE7
SCL
ELE1
15
ELE0
IRQ
1
Typical Applications
•
•
•
•
•
ELE10
20 19 18 17 16
Implementations
•
•
ELE11
VDD
Top View
REXT
•
•
•
•
1.71 V to 3.6 V operation
29 μA supply current at 16 ms sample period
3 μA shutdown current
12 electrodes
Continuous independent auto-calibration for each electrode input
Separate touch and release trip thresholds for each electrode,
providing hysteresis and electrode independence
I2C interface, with IRQ output to advise electrode status changes
3 mm x 3 mm x 0.65 mm 20 lead QFN package
LED driver functionality with 8 shared LEDs
-40°C to +85°C operating temperature range
VSS
•
•
•
•
•
•
Pin Connections
PC Peripherals
MP3 Players
Remote Controls
Mobile Phones
Lighting Controls
ORDERING INFORMATION
Device Name
Temperature Range
Case Number
Touch Pads
IRC Address
Shipping
MPR121QR2
-40°C to +85°C
2059 (20-Pin QFN)
12-pads
0x4C - 0x4F
Tape & Reel
This document contains a product under development. Freescale Semiconductor reserves the right to change or
discontinue this product without notice.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
SCHEMATIC DRAWINGS AND IMPLEMENTATION
VDD
1.71 V to 2.75 V
VDD
1.71 V to 2.75 V
0.1 μF
20
6
5
1
2
3
4
7
VDD
ELE11/LED7
VSS
ELE10/LED6
VREG
ELE9/LED5
IRQ
ELE8/LED4
SCL
ELE7/LED3
SDA
ELE6/LED2
ADDR
ELE5/LED1
REXT
ELE4/LED0
ELE3
ELE2
75 k 1%
ELE1
GND
ELE0
GND
19
18
17
16
15
14
13
12
11
10
9
8
MPR121Q
TOUCH SENSOR
Figure 1. Configuration 1: MPR121 runs from a 1.71 V to 2.75 V supply.
VDD
2.5 V to 3.6 V
VDD
2.5 V to 3.6 V
0.1 μF
20
6
5
1
2
3
4
7
VDD
ELE11/LED7
VSS
ELE10/LED6
VREG
ELE9/LED5
IRQ
ELE8/LED4
SCL
ELE7/LED3
SDA
ELE6/LED2
ADDR
ELE5/LED1
REXT
ELE4/LED0
ELE3
0.1 μF
75 k 1%
ELE2
ELE1
GND
GND
ELE0
GND
19
18
17
16
15
14
13
12
11
10
9
8
MPR121Q
TOUCH SENSOR
Figure 2. Configuration 2: MPR121 runs from a 2.5 V to 3.6 V supply.
Capacitance Sensing
The MPR121 uses a constant current touch sensor system with two primary types of control. It can measure capacitances
ranging from 10 pF to 2000 pF by varying the current and the amount of time supplied to each electrode. The electrodes are
controlled independently allowing for a great deal of flexibility in electrode pattern design. To make setup of the device easier, an
automatic configuration system can be used to set the ideal capacitance of each electrode. For information on how to set up this
system refer to application note AN3889.
Once capacitance is calculated, it runs through a couple of levels of digital filtering allowing for good noise immunity in different
environments without sacrificing response time or power consumption. The MPR121 can be configured for sample rates between
1 ms and 128 ms. For information on how to set up this system refer to application note AN3890.
MPR121
2
Sensors
Freescale Semiconductor
Touch Sensing
Once the capacitance is determined at any given moment, this information must then be translated into intelligent touch
recognition. The MPR121 has a couple of systems that have improved over the previous generation in the MPR03x series
devices. A baseline tracking system allows the system to track the untouched capacitance in the system. For information on how
to set up the baseline capacitance system refer to application note AN3891. The baseline value is then compared with the current
value to determine if a touch has occurred. A designer has the ability to set both the rising and falling thresholds in addition to a
debounce to eliminate jitter and false touches due to noise. These elements are described in application note AN3892.
Proximity Sensing
A new feature of the MPR121 is the use of a proximity sensing system whereby all of a system’s electrodes can be shorted
together internally and create a single large electrode. The capacitance of this electrode is larger and projected capacitance can
be measured. When enabled, this “13th” electrode will be included at the end of a normal detection cycle and will have its own
independent set of configuration registers. This system is described in application note AN3893.
LED Driver
The MPR121 includes eight shared LED driving pins. When these pins are not configured as electrodes, they may be used to
drive LEDs. The system allows for both pull up and pull down LED configurations as well as general GPIO push/pull functionality.
The configuration of the LED driver system is described in application note AN3894.
Serial Communication
The MPR121 is an Inter-Integrated Circuit (I2C) compliant device with an additional interrupt that is triggered any time a touch or
release of a button is detected. The device has a configurable I2C address by connecting the ADDR pin to the VDD, VSS, SDA
or SCL lines. The resulting I2C addresses are 0x4C, 0x4D, 0x4E and 0x4F respectively. The specific details of this system are
described in AN3895. For reference the register map of the MPR121 is included in Table 1.
MPR121
3
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Freescale Semiconductor
Table 1. Register Map
REGISTER
Fields
ELE0 - ELE7 Touch Status
ELE7
ELE6
ELE8 - ELE11, ELEPROX Touch Status
OVCF
ELEPROX
ELE0-7 OOR Status
ELE7
ELE6
ELE8-11, ELEPROX OOR Status
ARFF
ACFF
ELE0 Electrode Filtered Data LSB
ELE5
ELE5
ELE4
ELE3
ELE2
ELE1
ELE0
0x00
0x00
ELE10
ELE9
ELE8
0x01
0x00
ELE4
ELE3
ELE2
ELE1
ELE0
0x02
0x00
ELEPROX
ELE11
ELE10
ELE9
ELE8
0x03
0x00
0x04
0x00
0x05
0x00
0x06
0x00
0x07
0x00
0x08
0x00
0x09
0x00
0x0A
0x00
0x0B
0x00
0x0C
0x00
0x0D
0x00
0x0E
0x00
0x0F
0x00
0x10
0x00
0x11
0x00
0x12
0x00
0x13
0x00
0x14
0x00
0x15
0x00
0x16
0x00
0x17
0x00
0x18
0x00
0x19
0x00
0x1A
0x00
0x1B
0x00
0x1C
0x00
0x1D
0x00
EFD0LB
EFD0HB
EFD1LB
ELE1 Electrode Filtered Data MSB
ELE2 Electrode Filtered Data LSB
EFD1HB
EFD2LB
ELE2 Electrode Filtered Data MSB
ELE3 Electrode Filtered Data LSB
EFD2HB
EFD3LB
ELE3 Electrode Filtered Data MSB
ELE4 Electrode Filtered Data LSB
EFD3HB
EFD4LB
ELE4 Electrode Filtered Data MSB
ELE5 Electrode Filtered Data LSB
EFD4HB
EFD5LB
ELE5 Electrode Filtered Data MSB
ELE6 Electrode Filtered Data LSB
EFD5HB
EFD6LB
ELE6 Electrode Filtered Data MSB
ELE7 Electrode Filtered Data LSB
EFD6HB
EFD7LB
ELE7 Electrode Filtered Data MSB
ELE8 Electrode Filtered Data LSB
EFD7HB
EFD8LB
ELE8 Electrode Filtered Data MSB
ELE9 Electrode Filtered Data LSB
EFD8HB
EFD9LB
ELE9 Electrode Filtered Data MSB
ELE10 Electrode Filtered Data LSB
EFD9HB
EFD10LB
ELE10 Electrode Filtered Data MSB
ELE11 Electrode Filtered Data LSB
EFD10HB
EFD11LB
ELE11 Electrode Filtered Data MSB
ELEPROX Electrode Filtered Data LSB
Initial
Value
ELE11
ELE0 Electrode Filtered Data MSB
ELE1 Electrode Filtered Data LSB
Register
Address
EFD11HB
EFDPROXLB
ELEPROX Electrode Filtered Data MSB
EFDPROXHB
ELE0 Baseline Value
E0BV
0x1E
0x00
ELE1 Baseline Value
E1BV
0x1F
0x00
ELE2 Baseline Value
E2BV
0x20
0x00
ELE3 Baseline Value
E3BV
0x21
0x00
ELE4 Baseline Value
E4BV
0x22
0x00
ELE5 Baseline Value
E5BV
0x23
0x00
ELE6 Baseline Value
E6BV
0x24
0x00
ELE7 Baseline Value
E7BV
0x25
0x00
ELE8 Baseline Value
E8BV
0x26
0x00
ELE9 Baseline Value
E9BV
0x27
0x00
ELE10 Baseline Value
E10BV
0x28
0x00
ELE11 Baseline Value
E11BV
0x29
0x00
ELEPROX Baseline Value
0x2A
0x00
MHD Rising
EPROXBV
MHDR
0x2B
0x00
NHD Amount Rising
NHDR
0x2C
0x00
0x2D
0x00
NCL Rising
NCLR
FDL Rising
FDLR
0x2E
0x00
MHD Falling
MHDF
0x2F
0x00
NHD Amount Falling
NHDF
0x30
0x00
Auto
Increment
Address
Register
Address + 1
MPR121
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Sensors
Freescale Semiconductor
Table 1. Register Map
Fields
Register
Address
Initial
Value
NCL Falling
NCLF
0x31
0x00
FDL Falling
FDLF
0x32
0x00
0x33
0x00
REGISTER
NHD Amount Touched
NHDT
NCL Touched
NCLT
0x34
0x00
FDL Touched
FDLT
0x35
0x00
ELEPROX MHD Rising
MHDPROXR
0x36
0x00
ELEPROX NHD Amount Rising
NHDPROXR
0x37
0x00
ELEPROX NCL Rising
NCLPROXR
0x38
0x00
ELEPROX FDL Rising
FDLPROXR
0x39
0x00
ELEPROX MHD Falling
MHDPROXF
0x3A
0x00
ELEPROX NHD Amount Falling
NHDPROXF
0x3B
0x00
ELEPROX NCL Falling
NCLPROXF
0x3C
0x00
ELEPROX FDL Falling
FDLPROXF
0x3D
0x00
ELEPROX NHD Amount Touched
0x3E
0x00
ELEPROX NCL Touched
NCLPROXT
NHDPROXT
0x3F
0x00
ELEPROX FDL Touched
FDLPROXT
0x40
0x00
ELE0 Touch Threshold
E0TTH
0x41
0x00
ELE0 Release Threshold
E0RTH
0x42
0x00
ELE1 Touch Threshold
E1TTH
0x43
0x00
ELE1 Release Threshold
E1RTH
0x44
0x00
ELE2 Touch Threshold
E2TTH
0x45
0x00
ELE2 Release Threshold
E2RTH
0x46
0x00
ELE3 Touch Threshold
E3TTH
0x47
0x00
ELE3 Release Threshold
E3RTH
0x48
0x00
ELE4 Touch Threshold
E4TTH
0x49
0x00
ELE4 Release Threshold
E4RTH
0x4A
0x00
ELE5 Touch Threshold
E5TTH
0x4B
0x00
ELE5 Release Threshold
E5RTH
0x4C
0x00
ELE6 Touch Threshold
E6TTH
0x4D
0x00
ELE6 Release Threshold
E6RTH
0x4E
0x00
ELE7 Touch Threshold
E7TTH
0x4F
0x00
ELE7 Release Threshold
E7RTH
0x50
0x00
ELE8 Touch Threshold
E8TTH
0x51
0x00
ELE8 Release Threshold
E8RTH
0x52
0x00
ELE9 Touch Threshold
E9TTH
0x53
0x00
ELE9 Release Threshold
E9RTH
0x54
0x00
ELE10 Touch Threshold
E10TTH
0x55
0x00
ELE10 Release Threshold
E10RTH
0x56
0x00
ELE11 Touch Threshold
E11TTH
0x57
0x00
ELE11 Release Threshold
E11RTH
0x58
0x00
EPROXTTH
0x59
0x00
0x5A
0x00
0x5B
0x00
0x5C
0x10
0x5D
0x04
ELEPROX Touch Threshold
ELEPROX Release Threshold
EPROXRTH
Debounce Touch & Release
AFE Configuration
DR
FFI
Filter Configuration
Electrode Configuration
DT
CDC
CDT
CL
SFI
ESI
0x5E
0x00
ELE0 Electrode Current
EL
CDC0
EleEn
0x5F
0x00
ELE1 Electrode Current
CDC1
0x60
0x00
ELE2 Electrode Current
CDC2
0x61
0x00
Auto
Increment
Address
Register
Address + 1
MPR121
Sensors
Freescale Semiconductor
5
Table 1. Register Map
REGISTER
Fields
ELE3 Electrode Current
CDC3
Register
Address
Initial
Value
0x62
0x00
ELE4 Electrode Current
CDC4
0x63
0x00
ELE5 Electrode Current
CDC5
0x64
0x00
ELE6 Electrode Current
CDC6
0x65
0x00
ELE7 Electrode Current
CDC7
0x66
0x00
ELE8 Electrode Current
CDC8
0x67
0x00
ELE9 Electrode Current
CDC9
0x68
0x00
ELE10 Electrode Current
CDC10
0x69
0x00
ELE11 Electrode Current
CDC11
0x6A
0x00
ELEPROX Electrode Current
0x6B
0x00
ELE0, ELE1 Charge Time
CDT1
CDCPROX
CDT0
0x6C
0x00
ELE2, ELE3 Charge Time
CDT3
CDT2
0x6D
0x00
ELE4, ELE5 Charge Time
CDT5
CDT4
0x6E
0x00
ELE6, ELE7 Charge Time
CDT7
CDT6
0x6F
0x00
ELE8, ELE9 Charge Time
CDT9
CDT8
0x70
0x00
ELE10, ELE11 Charge Time
CDT11
CDT10
0x71
0x00
CDTPROX
0x72
0x00
ELEPROX Charge Time
GPIO Control Register 0
CTL011
CTL010
CTL09
CTL08
CTL07
CTL06
CTL05
CTL04
0x73
0x00
GPIO Control Register 1
CTL111
CTL110
CTL19
CTL18
CTL17
CTL16
CTL15
CTL14
0x74
0x00
GPIO Data Register
DAT11
DAT10
DAT9
DAT8
DAT7
DAT6
DAT5
DAT4
30x75
0x00
GPIO Direction Register
DIR11
DIR10
DIR9
DIR8
DIR7
DIR6
DIR5
DIR4
0x76
0x00
GPIO Enable Register
EN11
EN10
EN9
EN8
EN7
EN6
EN5
EN4
0x77
0x00
GPIO Data Set Register
SET11
SET10
SET9
SET8
SET7
SET6
SET5
SET4
0x78
0x00
GPIO Data Clear Register
CLR11
CLR10
CLR9
CLR8
7CLR7
CLR6
CLR5
CLR4
0x79
0x00
GPIO Data Toggle Register
TOG11
TOG10
TOG9
TOG8
TOG7
TOG6
TOG5
TOG4
0x7A
0x00
ARE
ACE
0x7B
0x00
OORIE
ARFIE
ACFIE
0x7C
0x00
AUTO-CONFIG Control Register 0
AUTO-CONFIG Control Register 1
AFES
RETRY
BVA
SCTS
AUTO-CONFIG USL Register
USL
0x7D
0x00
AUTO-CONFIG LSL Register
LSL
0x7E
0x00
TL
0x7F
0x00
AUTO-CONFIG Target Level Register
Auto
Increment
Address
Register
Address + 1
0x00
MPR121
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Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 2 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
Table 2. Absolute Maximum Ratings - Voltage (with respect to VSS)
Rating
Symbol
Value
Unit
Supply Voltage
VDD
-0.3 to +3.6
V
Supply Voltage
VREG
-0.3 to +2.75
V
VIN
VSS - 0.3 to VDD + 0.3
V
TO
-40 to +85
°C
GPIO Source Current per Pin
iGPIO
12
mA
GPIO Sink Current per Pin
iGPIO
1.2
mA
TS
-40 to +125
°C
Input Voltage
SCL, SDA, IRQ
Operating Temperature Range
Storage Temperature Range
ESD AND LATCH-UP PROTECTION CHARACTERISTICS
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 3. ESD and Latch-up Test Conditions
Rating
Symbol
Value
Unit
Human Body Model (HBM)
VESD
±2000
V
Machine Model (MM)
VESD
±200
V
Charge Device Model (CDM)
VESD
±500
V
Latch-up current at TA = 85°C
ILATCH
±100
mA
MPR121
Sensors
Freescale Semiconductor
7
DC CHARACTERISTICS
This section includes information about power supply requirements and I/O pin characteristics.
Table 4. DC Characteristics
(Typical Operating Circuit, VDD and VREG = 1.8 V, TA = 25°C, unless otherwise noted.)
Min
Typ
Max
High Supply Voltage
Parameter
Symbol
VDD
Conditions
2.5
3.3
3.6
Units
V
Low Supply Voltage
VREG
1.71
1.8
2.75
V
Average Supply Current
IDD
Run1 Mode @ 1 ms sample period
393
μA
Average Supply Current
IDD
Run1 Mode @ 2 ms sample period
199
μA
Average Supply Current
IDD
Run1 Mode @ 4 ms sample period
102
μA
Average Supply Current
IDD
Run1 Mode @ 8 ms sample period
54
μA
Average Supply Current
IDD
Run1 Mode @ 16 ms sample period
29
μA
Average Supply Current
IDD
Run1 Mode @ 32 ms sample period
17
μA
Average Supply Current
IDD
Run1 Mode @ 64 ms sample period
11
μA
Average Supply Current
IDD
Run1 Mode @ 128 ms sample period
8
μA
Measurement Supply Current
IDD
Peak of measurement duty cycle
1
mA
Idle Supply Current
IDD
Stop Mode
3
μA
IIH, IIL
Input Leakage Current ELE_
0.025
Input Capacitance ELE_
μA
15
Input High Voltage SDA, SCL
0.7 x VDD
VIH
Input Low Voltage SDA, SCL
V
VIL
IIH, IIL
Input Leakage Current
SDA, SCL
0.025
Input Capacitance
SDA, SCL
Output Low Voltage
SDA, IRQ
VOL
IOL = 6mA
Output High Voltage
ELE4 - ELE11 (GPIO mode)
VOHGPIO
VDD = 2.7 V to 3.6 V: IOHGPIO = -10 mA
VDD = 2.3 V to 2.7 V: IOHGPIO = -6 mA
VDD = 1.8 V to 2.3 V: IOHGPIO = -3 mA
Output Low Voltage
ELE4 - ELE11 (GPIO mode)
VOLGPIO
IOLGPIOD = 1 mA
Power On Reset
pF
0.3 x VDD
V
1
μA
7
pF
0.5V
V
VDD - 0.5
V
0.5
V
VTLH
VDD rising
1.08
1.35
1.62
V
VTHL
VDD falling
0.88
1.15
1.42
V
Min
Typ
Max
Units
AC CHARACTERISTICS
Table 5. AC CHARACTERISTICS
(Typical Operating Circuit, VDD and VREG = 1.8 V, TA = 25°C, unless otherwise noted.)
Parameter
Symbol
Conditions
8 MHz Internal Oscillator
fH
7.44
8
8.56
MHz
1 kHz Internal Oscillator
fL
0.65
1
1.35
kHz
MPR121
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Freescale Semiconductor
I2C AC CHARACTERISTICS
Table 6. I2C AC Characteristics
(Typical Operating Circuit, VDD and VREG = 1.8 V, TA = 25°C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
400
kHz
Serial Clock Frequency
fSCL
Bus Free Time Between a STOP and a START Condition
tBUF
1.3
μs
Hold Time, (Repeated) START Condition
tHD, STA
0.6
μs
Repeated START Condition Setup Time
tSU, STA
0.6
μs
STOP Condition Setup Time
tSU, STO
0.6
μs
Data Hold Time
tHD, DAT
Data Setup Time
tSU, DAT
100
ns
SCL Clock Low Period
tLOW
1.3
μs
SCL Clock High Period
tHIGH
0.7
μs
0.9
μs
Rise Time of Both SDA and SCL Signals, Receiving
tR
20+0.1Cb
300
ns
Fall Time of Both SDA and SCL Signals, Receiving
tF
20+0.1Cb
300
ns
tF.TX
20+0.1Cb
250
ns
Pulse Width of Spike Suppressed
tSP
25
Capacitive Load for Each Bus Line
Cb
Fall Time of SDA Transmitting
ns
400
pF
MPR121
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Freescale Semiconductor
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PACKAGE DIMENSIONS
PAGE 1 OF 3
MPR121
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PAGE 2 OF 3
MPR121
Sensors
Freescale Semiconductor
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PACKAGE DIMENSIONS
PAGE 3 OF 3
MPR121
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MPR121
Rev. 0
9/2009