深圳市南天星电子科技有限公司 专业代理飞思卡尔 (Freescale) 飞思卡尔主要产品 8 位微控制器 16 位微控制器 数字信号处理器与控制器 i.MX 应用处理器 基于 ARM®技术的 Kinetis MCU 32/64 位微控制器与处理器 模拟与电源管理器件 射频器件（LDMOS，收发器） 传感器（压力，加速度，磁场， 触摸，电池） 飞思卡尔产品主要应用 汽车电子 数据连接 消费电子 工业控制 医疗保健 电机控制 网络 智能能源 深圳市南天星电子科技有限公司 电话：0755－83040796 传真：0755－83040790 邮箱：[email protected] 网址：www.soustar.com.cn 地址：深圳市福田区福明路雷圳大厦 2306 室 SCS914DSTL 0.3A , 100V Plastic-Encapsulated Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free WBFBP-03D DESCRIPTION Epitaxial planar Silicon diode D L C FEATURES E Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance D H B F APPLICATIONS K A High Conductance Ultra Fast Diode For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Millimeter Min. Max. 0.950 1.050 0.950 1.050 0.010 0.070 0.210 0.310 0.350 REF. 0.680 REF. REF. A B C D E F MARKING G J REF. G H J K L Millimeter Min. Max. 0.050 0.510 0.610 0.250 0.350 0.050 0.450 0.550 5D TOP VIEW PACKAGE INFORMATION Package MPQ Leader Size WBFBP-03D 5K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Symbol Rating Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR 100 V Non-Repetitive Peak reverse voltage VRM 100 V VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 300 mA Power Dissipation PD 100 mW TJ,TSTG 125, -55~150 °C RMS Reverse Voltage Operating Junction and Storage Temperature http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SCS914DSTL 0.3A , 100V Plastic-Encapsulated Switching Diode Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Max. Unit VF1 - 0.715 V IF=1mA VF2 - 0.855 V IF=10mA VF3 - 1 V IF=50mA VF4 - 1.25 V IF=150mA Maximum DC Reverse Current at rated DC blocking voltage IR1 - 1 µA VR=75V 25 nA VR=20V Capacitance between terminals CT - 2 pF VR=0, f=1MHz Maximum Reverse Recovery Time TRR - 4 nS IF=IR=10mA, Irr=0.1XIR Forward Voltage IR2 Test Conditions CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2