BAS16V 0.3A , 100V Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-563 Fast switching speed For General Purpose Switching Applications High Conductance A B MARKING J D KAM C PACKAGE INFORMATION REF. Package MPQ Leader Size SOT-563 3K 7 inch G H F A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 0.05 E REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Non-Repetitive Peak reverse voltage VRM 100 V Maximum Repetitive Peak Reverse Voltage VRRM 75 V Working Peak Reverse Voltage VRWM 75 V Maximum DC Blocking Voltage VR 75 V VR(RMS) 53 V IFM 300 mA Maximum Average Forward Rectified Current IF(AV) 200 mA Peak Forward Surge Current 8.3 ms Single Half t=1.0µs Sine-Wave Super Imposed on Rated Load (JEDEC t=1.0s Method) IFSM Power dissipation PD 150 mW RθJA 833 K/W TJ,TSTG 150,-65~150 °C RMS Reverse Voltage Peak forward Continuous current Thermal Resistance Junction to Ambient Operating Junction and storage temperature range http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A 2.0 A 1.0 Any changes of specification will not be informed individually. Page 1 of 2 BAS16V 0.3A , 100V Plastic-Encapsulated Transistors Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit V(BR)R 75 - - V VF1 - - 0.715 VF2 - - 0.855 VF3 - - 1 VF4 - - 1.25 IR1 - - 1 IR2 - - 0.025 Diode Capacitance CD - - 2.0 pF VR=0 , f=1MHz Reverse Recovery Time TRR - - 4.0 nS IF=IR=10mA, IRR=0.1 x IR, RL=100Ω Reverse Breakdown Voltage Forward Voltage Reverse Voltage Leakage Current Test Condition IR=100µA IF=1mA V IF=10mA IF=50mA IF=150mA µA VR=75V VR=20V RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2