UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES 1 TO-220F *Pb-free plating product number: 5N60L * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra low gate charge ( typical 15 nC ) * Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 5N60-TA3-T 5N60-TF3-T Order Number Lead Free Plating 5N60L-TA3-T 5N60L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 5N60L-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-065,B 5N60 Power MOSFET ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) SYMBOL VDSS VGSS IAR RATINGS UNIT 600 V ±30 V 4.5 A TC = 25℃ 4.5 A ID Continuous Drain Current TC = 100℃ 2.6 A Pulsed Drain Current (Note 1) IDM 18 A Avalanche Energy, Single Pulsed (Note 2) EAS 210 mJ Avalanche Energy, Repetitive Limited by TJ(MAX) EAR 10 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TC = 25℃ 100 W Power Dissipation PD Derate above 25℃ 0.8 W/℃ Junction Temperature TJ +150 ℃ Operating and Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC θCS Junction-to-Ambient Junction-to-Case Case-to-Sink RATINGS 62.5 1.25 0.5 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Breakdown Voltage Temperature Coefficient Gate-Body Leakage Current Forward Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Delay Time Turn-On Rise Time Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS =0V, ID = 250µA VDS =600V, VGS = 0V VDS =480V, TC = 125℃ MIN VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS =VGS, ID = 250µA VGS =10V, ID = 2.25A VDS =40V, ID = 2.25A (Note 4) VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 300V, ID =4.5 A, RG = 25Ω (Note 4, 5) VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4, 5) TYP MAX UNIT 600 1 10 △BVDSS/△ ID =250µA, Referenced to 25℃ TJ VGS =30V, VDS = 0V IGSS VGS =-30V, VDS = 0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.6 V µA µA V/℃ 100 -100 nA nA 4.0 2.5 V Ω S 515 55 6.5 670 72 8.5 pF pF pF 10 42 38 46 15 2.5 6.6 30 90 85 100 19 ns ns ns ns nC nC nC 2.0 2.0 4.7 2 of 6 QW-R502-065,B 5N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode Forward ISM Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Note 1. Repetitive Rating : Pulse width limited by TJ 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃ 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 300 2.2 1.4 V 4.5 A 18 A ns µC 3 of 6 QW-R502-065,B 5N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-065,B 5N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-065,B 5N60 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Region Characteristics V GS Top: 5.0V 101 Bottorm :4.5V 10 -1 *Notes: 1. 250µs Pulse Test 2. TC=25℃ 4.5V Drain-Source On-Resistance, RDS(O N) (Ω) 10-2 10-1 Drain Current, ID (A) 100 10 25℃ 100 *Notes: 1. VDS=40V 2. 250µs Pulse Test 4 6 8 Gate-Source Voltage, VGS (V) On-Resistance Variation vs. Drain Current and Gate Voltage 6 10 Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 5 100sµ 1 10 VGS =10V 4 VGS=20V 3 2 1 0 1 10-1 2 100 101 Drain-Source Voltage, VDS (V) Drain Current, I D (A) Drain Current, ID (A) 5V 100 10-1 *Note: TJ=25℃ 0 2 4 6 Drain Current, ID (A) 8 10 1ms 10 0m 10ms s DC 10 -2 0 10 *Notes: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 1 2 10 10 Drain-Source Voltage, VDS (V) 3 10 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-065,B