UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 1.5Ω @VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 18 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Lead Free Halogen Free 7N70L-TF3-T 7N70G-TF3-T 7N70L-TF1-T 7N70G-TF1-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 8 QW-R502-103,B 7N70 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 700 V ±30 V TC = 25°C 7.0 A Continuous Drain Current ID TC = 100°C 4.7 A Drain Current Pulsed (Note 1) IDM 28 A Avalanche Energy, Single Pulsed (Note 2) EAS 530 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220F 142 W Power Dissipation (TC = 25°C) PD TO-220F1 48 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F TO-220F1 TO-220F TO-220F1 θJA θJC RATINGS 62.5 62.5 0.88 2.6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF Characteristics Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current Gate-Source Leakage Current IDSS Forward Reverse Breakdown Voltage Temperature Coefficient ON Characteristics Gate Threshold Voltage Drain-Source ON-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IGSS VGS = 0 V, ID = 250 μA VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V MIN TYP MAX UNIT 700 VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD VDS = VGS, ID = 250 μA VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4) VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 350V, ID = 7.0 A (Note 4, 5) VDS= 560V, ID= 7.0A, VGS= 10 V (Note 4, 5) V μA μA nA nA 1 1 100 -100 △BVDSS/△TJ ID = 250 μA, Referenced to 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.67 2.0 1.35 8.0 V/℃ 4.0 1.5 V Ω S 1200 1600 150 190 18 25 35 79 80 52 30 6.5 13 80 165 160 120 pF pF pF ns ns ns ns nC nC nC 2 of 8 QW-R502-103,B 7N70 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =7.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.0 A, dIF/dt = 100 A/μs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 Ω, Starting TJ = 25°C 3. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 320 2.4 1.4 V 7.0 A 28 A ns μC 3 of 8 QW-R502-103,B 7N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-103,B 7N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-103,B 7N70 TYPICAL CHARACTERISTICS Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) Power MOSFET Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area Operation in This Area is Limited by RDS(ON) 100µs 10 6 1ms 10ms 1 0.1 1 8 4 DC Notes: 1. TJ=25℃ 2. TJ=150℃ 3. Single Pulse 10 2 100 1000 Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 Case Temperature, TC (℃) 6 of 8 QW-R502-103,B 7N70 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature 10 2.5 2.0 1.5 150℃ VGS=20V 25℃ VGS=10V 1 1.0 0.5 0 0 Note: TJ=25℃ 5 10 15 20 25 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) 7 of 8 QW-R502-103,B 7N70 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-103,B