APT10M25BVFR
100V
POWER MOS V ®
75A 0.025Ω
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
TO-247
• 100% Avalanche Tested
D
FREDFET
• Lower Leakage
• Popular TO-247 Package
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M25BVFR
UNIT
100
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
5
75
5
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
300
Watts
Linear Derating Factor
2.4
W/°C
VGSM
PD
TJ,TSTG
300
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
5
75
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
100
Volts
75
Amps
On State Drain Current
2
5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.025
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5605 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10M25BVFR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
4300
5160
Coss
Output Capacitance
VDS = 25V
1600
2240
Reverse Transfer Capacitance
f = 1 MHz
650
975
VGS = 10V
150
225
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
28
75
42
115
VGS = 15V
13
26
Crss
Qg
3
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
22
44
ID = ID [Cont.] @ 25°C
40
60
RG = 1.6Ω
10
20
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
5
Continuous Source Current
IS
MIN
75
(Body Diode)
ISM
Pulsed Source Current
1
5
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID [Cont.])
dv/
dt
Peak Diode Recovery dv/dt
300
(Body Diode)
6
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
200
Tj = 125°C
300
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
0.5
Tj = 125°C
1.1
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
14
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.42
RθJC
Junction to Case
RθJA
Junction to Ambient
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum T
j
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting T = +25°C, L = 0.53mH, R = 25Ω, Peak I = 75A
j
G
L
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
6 I ≤ -I [Cont.], di/ = 100A/µs, V = 50V, T ≤ 150°C, R = 2.0Ω
S
D
R
j
G
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.5
050-5605 Rev B
UNIT
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10M25BVFR
150
VGS=10V & 15V
125
7V
100
6.5V
75
6V
50
5.5V
5V
25
4.5V
ID, DRAIN CURRENT (AMPERES)
125
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
TJ = +125°C
75
50
25
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
60
40
20
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
75
6V
50
5.5V
5V
25
4.5V
1.2
V
1.1
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
VGS=10V
1.0
0.9
0.8
VGS=20V
0
25
50
75
100
125
150
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
1.75
1.50
1.25
1.00
0.75
0.50
-50
6.5V
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.00
7V
100
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
10V
4V
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4V
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
150
VGS=15V
125
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5605 Rev B
ID, DRAIN CURRENT (AMPERES)
150
APT10M25BVFR
400
100
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100µS
OPERATION HERE
LIMITED BY RDS (ON)
1mS
50
10mS
10
5
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
VDS=20V
VDS=50V
12
VDS=80V
8
4
0
Ciss
Ciss
5,000
Coss
Crss
1,000
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
16
10,000
100
1
5
10
50
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
DC
1
20
15,000
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
050-5605 Rev B
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058