APT6025BVFR
APT6025SVFR
600V 25A 0.250Ω
POWER MOS V ®
FREDFET
D3PAK
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount
D3PAK Package
• Faster Switching
D
FREDFET
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6025BVFR_SVFR
UNIT
600
Volts
Drain-Source Voltage
25
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
VGSM
PD
TJ,TSTG
100
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
25
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 12.5A)
TYP
MAX
Volts
0.250
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
UNIT
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-5631 Rev A 1-2005
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6025BFVR_SVFR
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
MAX
VGS = 0V
5160
VDS = 25V
525
735
f = 1 MHz
220
330
VGS = 10V
185
275
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
23
85
35
125
VGS = 15V
14
28
VDD = 0.5 VDSS
12
28
ID = ID [Cont.] @ 25°C
55
80
RG = 1.6Ω
10
20
TYP
MAX
3
Gate-Drain ("Miller") Charge
t d(on)
TYP
4300
Test Conditions
Characteristic
Ciss
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
Fall Time
MIN
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
25
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
MIN
Peak Diode Recovery
dt
dv/
100
(Body Diode)
dt
UNIT
Amps
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
5
15
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
205
250
Tj = 125°C
415
525
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.5
Tj = 125°C
5.5
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
23
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.34
40
1 Repetitive Rating: Pulse width limited by maximum junction
UNIT
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 4.16mH, R = 25Ω, Peak I = 25A
temperature.
j
G
L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5631 Rev A 1-2005
0.4
0.01
t1
t2
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6025BFVR_SVFR
Typical Performance Curves
VGS=7V, 10V & 15V
60
50
40
5.5V
30
5V
20
4.5V
10
4V
0
40
30
20
TJ = +125°C
10
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
20
15
10
5
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
4.5V
10
4V
1.3
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.2
1.1
VGS=10V
VGS=20V
1.0
0.9
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
5V
20
1.2
I = 0.5 I [Cont.]
D
30
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.5
5.5V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5631 Rev A 1-2005
ID, DRAIN CURRENT (AMPERES)
25
40
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
50
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
6V
50
0
0
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
60
VGS=7V, 10V & 15V
6V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
60
APT6025BFVR_SVFR
Typical Performance Curves
10µS
50
15,000
10,000
100µS
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
1mS
10
5
10mS
100mS
1
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
I = I [Cont.]
D
VDS=120V
16
VDS=300V
12
VDS=480V
8
4
0
0
50
100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
TJ =+150°C
5
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
D PAK Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
Drain
TJ =+25°C
10
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Crss
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1,000
100
0.1
20
Ciss
5,000
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
050-5631 Rev A 1-2005
13.41 (.528)
13.51 (.532)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.