APT20M18B2VR
APT20M18LVR
200V 100A 0.018W
POWER MOS V ®
B2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package
• Faster Switching
D
• 100% Avalanche Tested
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M18
UNIT
200
Volts
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
AD IN
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
5
100
5
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.0
W/°C
VGSM
PD
TJ,TSTG
400
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
5
-55 to 150
EAS
Single Pulse Avalanche Energy
Amps
100
1
Repetitive Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
Volts
100
Amps
On State Drain Current
2
5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.018
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
rev- 11-99
BVDSS
Characteristic / Test Conditions
050-5910
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT20M18 B2VR - LVR
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
9910
Coss
Output Capacitance
VDS = 25V
2270
Crss
Reverse Transfer Capacitance
f = 1 MHz
650
Qg
Qgs
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
tf
330
VDD = 0.5 VDSS
75
ID = 0.5 ID[Cont.] @ 25°C
143
Gate-Source Charge
td(on)
td(off)
VGS = 10V
VGS = 15V
18
VDD = 0.5 VDSS
27
ID = ID[Cont.] @ 25°C
54
RG = 0.6W
6
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
AD IN
Total Gate Charge
3
Qgd
tr
MAX
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
Characteristic / Test Conditions
Continuous Source Current
5
MIN
TYP
MAX
100
(Body Diode)
Pulsed Source Current
1
5
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
400
(Body Diode)
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
360
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
6.7
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
0.20
40
1 Repetitive Rating: Pulse width limited by maximum T
j
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting T = +25°C, L = 600µH, R = 25W, Peak I = 100A
j
G
L
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
20.80 (.819)
21.46 (.845)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
rev- 11-99
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
5.79 (.228)
6.20 (.244)
Collector
Collector
5.38 (.212)
6.20 (.244)
050-5910
MAX
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
UNIT
°C/W