APT10025PVR
33A 0.250Ω
1000V
POWER MOS V ®
P-Pack
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
D
• Lower Leakage
G
S
MAXIMUM RATINGS
Continuous Drain Current @ TC = 25°C
1
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
TJ,TSTG
Volts
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
±30
625
Watts
5.0
W/°C
Single Pulse Avalanche Energy
Amps
50
4
mJ
3600
PR
EAS
°C
33
1
Repetitive Avalanche Energy
Volts
±40
(Repetitive and Non-Repetitive)
EAR
Amps
132
300
EL
1
33
-55 to 150
Operating and Storage Junction Temperature Range
IM
PD
1000
Drain-Source Voltage
IDM
VGSM
UNIT
RY
ID
APT10025PVR
A
VDSS
Parameter
IN
Symbol
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
1000
Volts
33
Amps
(VGS = 10V, 0.5 ID[Cont.])
0.250
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
UNIT
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5809 Rev -
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10025PVR
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
15000
Coss
Output Capacitance
VDS = 25V
1360
Reverse Transfer Capacitance
f = 1 MHz
710
Qg
Qgs
Total Gate Charge
3
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
td(off)
tf
660
51
ID = ID[Cont.] @ 25°C
250
Gate-Source Charge
Qgd
tr
VGS = 10V
VDD = 0.5 VDSS
VGS = 15V
22
VDD = 0.5 VDSS
20
ID = ID[Cont.] @ 25°C
97
RG = 0.6Ω
16
Rise Time
Turn-off Delay Time
Fall Time
RY
Crss
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISM
VSD
Characteristic / Test Conditions
MIN
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
RθJC
Junction to Case
RθJA
Junction to Ambient
132
MIN
µC
TYP
P-Pack Package Outline
3.43 (.135)
2.92 (.115)
(4-Places)
9.27 (.365)
8.64 (.340)
1.40 (.055)
1.02 (.040)
Source
Drain
4.06 (.160)
3.81 (.150)
(5 Places)
51.05 (2.01)
50.55 (1.99)
35.81 (1.41)
35.31 (1.39)
29.34 (1.155)
29.08 (1.145)
Dimensions in Millimeters and (Inches)
5.33 (.210)
4.83 (.190)
.635 (.025)
.381 (.015)
Source Sense
4.39 (.173)
4.14 (.163)
(4 Places)
12.45 (.490)
11.94 (.470)
Gate
10.92 (.430)
10.67 (.420)
Volts
38
41.53 (1.635)
41.02 (1.615)
28.70 (1.130)
28.45 (1.120)
Amps
ns
MAX
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 6.61mH, R = 25Ω, Peak I = 33A
j
G
L
35.18 (1.385)
34.67 (1.365)
UNIT
1300
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5809 Rev -
MAX
40
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
11.63 (.458)
11.13 (.438)
ns
0.20
1 Repetitive Rating: Pulse width limited by maximum junction
3.43 (.135)
2.92 (.115)
(4-Places)
nC
1.3
EL
Characteristic
PR
Symbol
UNIT
pF
33
IM
t rr
THERMAL CHARACTERISTICS
TYP
A
IS
IN
Symbol
MAX
UNIT
°C/W