APT8024B2VFR
APT8024LVFR
800V 33A 0.240W
POWER MOS V ®
FREDFET
B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
• Identical Specifications: T-MAX™ or TO-264 Package
D
• Lower Leakage
• Faster Switching
• Fast Recovery Body Diode
• 100% Avalanche Tested
MAXIMUM RATINGS
Symbol
VDSS
ID
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8024
UNIT
800
Volts
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
A
IN
Drain-Source Voltage
33
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.0
W/°C
VGSM
PD
TJ,TSTG
132
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
300
33
(Repetitive and Non-Repetitive)
1
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
Volts
°C
Amps
50
4
3000
mJ
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
Volts
33
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.240
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
rev- 11-99
BVDSS
Characteristic / Test Conditions
050-5907
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8024 B2VFR - LVFR
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
7700
Coss
Output Capacitance
VDS = 25V
750
Crss
Reverse Transfer Capacitance
f = 1 MHz
370
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
MAX
pF
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
A
IN
Total Gate Charge
3
VGS = 10V
390
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
35
202
Gate-Source Charge
Gate-Drain ("Miller") Charge
VGS = 15V
18
VDD = 0.5 VDSS
15
ID = ID [Cont.] @ 25°C
66
RG = 0.6W
9
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
UNIT
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
Pulsed Source Current
VSD
Diode Forward Voltage
dt
TYP
Peak Diode Recovery
1
132
(Body Diode)
2
dv/
dt
MAX
33
Continuous Source Current (Body Diode)
ISM
dv/
MIN
(VGS = 0V, IS = -ID [Cont.])
5
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.2
Tj = 125°C
7.5
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
14
Tj = 125°C
24
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
Junction to Case
RqJA
Junction to Ambient
40
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
20.80 (.819)
21.46 (.845)
4.50
(.177) Max.
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
5.79 (.228)
6.20 (.244)
Collector
Collector
5.38 (.212)
6.20 (.244)
0.40 (.016)
0.79 (.031)
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 5.51mH, R = 25W, Peak I = 33A
j
G
L
5 I £ -I [Cont.], di/ = 100A/µs, T £ 150°C, R = 2.0W, V = 200V.
S
D
j
G
R
dt
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
rev- 11-99
UNIT
0.20
RqJC
1 Repetitive Rating: Pulse width limited by maximum junction
050-5907
MAX
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058