APT55M85B2FLL
APT55M85LFLL
550V 59A 0.085W
POWER MOS 7TM
FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
VDSS
ID
B2FLL
T-MAX™
TO-264
LFLL
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT55M85
UNIT
550
Volts
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
59
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
VGSM
PD
TJ,TSTG
236
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
59
(Repetitive and Non-Repetitive)
1
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
59
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.085
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7231 Rev- 4-2002
Symbol
APT55M85 B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
6850
Coss
Output Capacitance
VDS = 25V
1320
Crss
Reverse Transfer Capacitance
f = 1 MHz
92
VGS = 10V
164
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
41
74
VGS = 15V
19
VDD = 0.5 VDSS
14
ID = ID [Cont.] @ 25°C
41
RG = 0.6Ω
6
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
tr
t d(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
Qgs
t d(on)
MAX
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
Peak Diode Recovery dv/dt
dt
MIN
(Body Diode)
MAX
59
236
UNIT
Amps
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
5
15
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
270
Tj = 125°C
540
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
6.2
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
29
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.72mH, R = 25Ω, Peak I = 59A
j
G
L
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
050-7231 Rev- 4-2002
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
UNIT
0.18
RθJC
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
°C/W