ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package. • • • • • • • • • • The ALD1103 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1103 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1103 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000. FEATURES Precision current mirrors Complementary push-pull linear drives Analog switches Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog inverter Precision matched current sources PIN CONFIGURATION DN1 1 14 DN2 GN1 2 13 GN2 SN1 3 12 SN2 V- 4 11 V+ DP1 5 10 DP2 GP1 6 9 GP2 SP1 7 8 SP2 DB, PB, SB PACKAGE • Thermal tracking between N-channel and P-channel pairs • Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS • Low input capacitance • Low Vos -- 10mV • High input impedance -- 1013Ω typical • Low input and output leakage currents • Negative current (IDS) temperature coefficient • Enhancement mode (normally off) • DC current gain 109 • Matched N-channel and matched P-channel in one package BLOCK DIAGRAM N GATE 1 (2) N SOURCE 1 (3) N DRAIN 1 (1) SUBSTRATE (4) N SOURCE 2 (12) N DRAIN 2 (14) N GATE 2 (13) ORDERING INFORMATION -55°C to +125°C P GATE 1 (6) Operating Temperature Range* 0°C to +70°C 0°C to +70°C 14-Pin CERDIP Package 14-Pin Plastic Dip Package 14-Pin SOIC Package ALD1103 DB ALD1103 PB ALD1103 SB * Contact factory for industrial temperature range. P SOURCE 1 (7) P DRAIN 1 (5) SUBSTRATE (11) P DRAIN 2 (10) P SOURCE 2 (8) P GATE 2 (9) © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range 13.2V 13.2V 500 mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C PB, SB package DB package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS T A = 25°C unless otherwise specified N - Channel Parameter Symbol Min Typ Max Gate Threshold VT 0.4 0.7 1.0 Voltage Offset Voltage VGS1 - VGS2 10 VOS Gate Threshold Temperature TCVT Drift -1.2 Unit V Test Conditions IDS = 10µA VGS = VDS mV IDS = 100µA VGS = VDS 40 mA VGS = V DS = 5V 5 10 mmho VDS = 5V IDS= 10mA ∆G fs 0.5 % Output Conductance G OS 200 µmho Drain Source ON Resistance RDS(ON) IDS (ON) Trans-. conductance G fs Mismatch 50 Drain Source ON Resistance ∆RDS(ON) Mismatch Drain Source Breakdown Voltage BVDSS 0.5 12 IDS = -100µA VGS = V DS -1.3 mV/°C -8 -16 mA VGS = VDS = -5V 2 4 mmho VDS = -5V IDS= -10mA 500 µmho VDS = -5V IDS = -10mA Ω VDS = 0.1V VGS = 5V 180 Ω VDS = -0.1V VGS = -5V % VDS = 0.1V VGS = 5V 0.5 % VDS = -0.1V VGS = -5V V IDS = 10µA VGS =0V V IDS = -10µA VGS =0V VDS =12V IGS = 0V TA = 125°C IGSS 1 50 10 pA nA VDS = 0V VGS =12V TA = 125°C CISS 6 10 pF Input Capacitance mV VDS = 5V IDS = 10mA nA µA Gate Leakage Current Test Conditions IDS = -10µA VGS = V DS % 4 4 IDS(OFF) ALD1103 75 Unit V 0.5 0.1 Off Drain Current 10 mV/°C 25 On Drain Current P - Channel Min Typ Max -0.4 -0.7 -1.2 Advanced Linear Devices 270 -12 0.1 4 4 nA µA VDS = -12V VGS = 0V TA = 125°C 1 50 10 pA nA VDS = 0V VGS =-12V TA = 125°C 6 10 pF 2 P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS VGS = -12V VBS = 0V TA = 25°C -60 -10V -8V -40 -6V -20 -4V -4V -2V 0 -2 -2V 0 -2 -4 -6 -8 -10 -4 -320 -12 -160 DRAIN -SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN - SOURCE VOLTAGE TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS -20 10000 IDS = -5mA VBS = 0V f = 1KHz 5000 2000 1000 TA = +125°C TA = +25°C 500 IDS = -1mA 200 VBS = 0V 4V 6V 8V 10V 12V 2V -15 -10 -5 VGS = VDS TA = 25°C 0 100 0 -2 -4 -6 -8 -10 0 -12 -0.8 RDS (ON) vs. GATE - SOURCE VOLTAGE VDS = 0.4V VBS = 0V TA = +125°C 100 TA = +25°C 10 0 -2 -4 -6 -8 -2.4 -3.2 -4.0 -10 OFF DRAIN - CURRENT vs. TEMPERATURE OFF - DRAIN SOURCE CURRENT (A) 10000 1000 -1.6 GATE - SOURCE VOLTAGE (V) DRAIN - SOURCE VOLTAGE (V) -10X10-6 VDS = -12V VGS = VBS = 0V -10X10-9 -10X10-12 -12 GATE - SOURCE VOLTAGE (V) ALD1103 320 160 0 DRAIN - SOURCE VOLTAGE (V) DRAIN-SOURCE CURRENT (µA) FORWARD TRANSCONDUCTANCE (µmho) -6V 2 0 DRAIN - SOURCE ON RESISTANCE (Ω) VGS = -12V VBS = 0V TA = 25°C DRAIN-SOURCE CURRENT (mA) DRAIN - SOURCE CURRENT (mA) 4 -80 -50 -25 0 +25 +50 +75 +100 +125 TEMPERATURE (°C) Advanced Linear Devices 3 N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS VGS = 12V VBS = 0V TA = 25°C 10V 120 8V 80 6V 40 4V VBS = 0V TA = 25°C DRAIN-SOURCE CURRENT (mA) DRAIN -SOURCE CURRENT (mA) 8 160 2V 2 4 6 8 10 6V 4 4V 2V 0 -4 0 0 -8 -160 12 -80 FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE VBS = 0V f = 1KHz 160 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS IDS = 10mA 2 x104 TA = +25°C TA = +125°C 1 x104 5 x103 2 x103 VGS = VDS TA = 25°C 15 VBS = 0V 2 4 6 -6V -8V -10V 5 -12V 0 8 10 0 12 0.8 RDS (ON) vs. GATE - SOURCE VOLTAGE OFF - DRAIN SOURCE CURRENT (A) 10000 VDS = 0.2V VBS = 0V 1000 TA = +125°C 100 TA = +25°C 0 2 4 6 8 1.6 2.4 3.2 4.0 GATE - SOURCE VOLTAGE (V) DRAIN -SOURCE VOLTAGE (V) 10 -4V -2V 10 IDS = 1mA 1 x103 0 DRAIN - SOURCE ON RESISTANCE (Ω) 80 20 5 x104 10 10X10-6 OFF DRAIN - CURRENT vs. TEMPERATURE VDS = +12V VGS = VBS = 0V 10X10-9 10X10-12 12 -50 -25 0 +25 +50 +75 +100 +125 TEMPERATURE (°C) GATE SOURCE VOLTAGE (V) ALD1103 0 DRAIN -SOURCE VOLTAGE (mV) DRAIN-SOURCE CURRENT (µA) FORWARD TRANSCONDUCTANCE (µmho) DRAIN-SOURCE VOLTAGE (V) 1 x105 VGS = 12V Advanced Linear Devices 4 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL V+ = +5V V+ = +5V 1/2 ALD1103 V+ = +5V ISET Q3 Q4 Q3 Q4 RSET ISET I SOURCE Q1 Q2 ALD1103 Q1 ON I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET ISOURCE RSET Digital Logic Control of Current Source 1/4 ALD1103 OFF : N - Channel MOSFET Q1 Q3,Q4 : P - Channel MOSFET CURRENT SOURCE MULTIPLICATION DIFFERENTIAL AMPLIFIER V+ V+ = +5V PMOS PAIR Q3 VIN+ ISET Q4 Q1 ALD1103 Q2 NMOS PAIR ISOURCE = ISET x N VOUT Q1 QSET Q2 Q3 QN VIN- Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET ALD1103 RSET QSET, Q1..QN: ALD 1101 or ALD 1103 N - Channel MOSFET Advanced Linear Devices 5 TYPICAL APPLICATIONS BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE P- CHANNEL CURRENT SOURCE V+ = +5V V+ = +5V RSET ISET 1/2 ALD1103 ISOURCE 8 Q2 8 3 5 6 Q1 2 7 3 2 Q4 5 1 I SOURCE ISET 1/2 ALD1103 ISOURCE = ISET = 7 6 Q3 V+ - Vt RSET V+ - 1.0 ~ ~ = = RSET RSET 4 RSET Q1, Q2 : N - Channel MOSFET Q3, Q4: P - Channel MOSFET CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ISET RSET ISOURCE Q4 Q2 Q1 Q2 Q3 Q4 Q3 Q1 ISET ISOURCE = ISET = V+ - 2Vt RSET ~ = 3 RSET Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) ALD1103 ISOURCE RSET Advanced Linear Devices 6