ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits. FEATURES • Low threshold voltage of 0.7V • Low input capacitance • Low Vos 2mV typical • High input impedance -- 1014Ω typical • Negative current (I DS) temperature coefficient • Enhancement-mode (normally off) • DC current gain 10 9 • Low input and output leakage currents APPLICATIONS • • • • • • • • Precision current mirrors Precision current sources Voltage choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog signal processing PIN CONFIGURATION ALD1116 DN1 1 8 DN2 GN1 2 7 GN2 SN1 3 6 SN2 V- 4 5 V+ DA, PA, SA PACKAGE 1 ALD1106 ORDERING INFORMATION Operating Temperature Range* -55°C to +125°C 0°C to +70°C 0°C to +70°C 8-Pin CERDIP Package 8-Pin Plastic Dip Package 8-Pin SOIC Package ALD1116 DA ALD1116 PA ALD1116 SA DN1 1 14 DN2 GN1 2 13 GN2 SN1 3 12 SN2 V- 4 11 V+ DN4 5 10 DN3 14-Pin CERDIP Package 14-Pin Plastic Dip Package 14-Pin SOIC Package GN4 6 9 GN3 ALD1106 DB ALD1106 PB ALD1106 SB SN4 7 8 SN3 DB, PB, SB PACKAGE * Contact factory for industrial temperature range. BLOCK DIAGRAM BLOCK DIAGRAM ALD1116 ALD1106 V+ (5) V+ (11) DN2 (14) DN1 (1) ~ DN4 (5) DN3 (10) GN2 (13) GN3 (9) GN1 (2) SN1 (3) V- (4) SN2 (12) DN1 (1) GN4 (6) SN3 (8) V- (4) SN4 (7) ~ DN2 (8) GN1 (2) GN2 (7) SN1 (3) V- (4) SN2 (6) © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, V GS Power dissipation Operating temperature range 13.2V 13.2V 500 mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C PA, SA, PB, SB package DA, DB package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS T A = 25°C unless otherwise specified ALD1106 Parameter Symbol Gate Threshold Voltage VT Offset Voltage VGS1-VGS2 VOS Gate Threshold Temperature Drift 2 On Drain Current Transconductance ALD1116 Test Min Typ Max Min Typ Max Unit 0.4 0.7 1.0 0.4 0.7 1.0 V IDS = 1.0µA VGS = VDS 2 10 2 10 mV IDS = 10µA VGS = VDS -1.2 TCVT -1.2 mV/°C Conditions IDS (ON) 3.0 4.8 3.0 4.8 mA VGS = VDS = 5V GIS 1.0 1.8 1.0 1.8 mmho VDS = 5V IDS= 10mA Mismatch ∆Gfs 0.5 0.5 % Output Conductance GOS 200 200 µmho VDS = 5V IDS = 10mA Ω VDS = 0.1V VGS = 5V % VDS = 0.1V VGS = 5V V IDS = 1.0µA VGS = 0V 350 Drain Source RDS (ON) On Resistance Drain Source On Resistence Mismatch ∆DS (ON) Drain Source Breakdown Voltage BVDSS 500 350 0.5 500 0.5 12 12 Off Drain Current 1 IDS (OFF) 10 400 4 10 400 4 pA nA VDS =12V VGS = 0V TA = 125°C Gate Leakage Current IGSS 0.1 10 1 0.1 10 1 pA nA VDS = 0V VGS = 12V TA = 125°C Input Capacitance 2 CISS 1 3 1 3 pF Notes: 1 2 Consists of junction leakage currents Sample tested parameters ALD1106/ALD1116 Advanced Linear Devices 2 TYPICAL PERFORMANCE CHARACTERISITCS LOW VOLTAGE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS VGS = 12V VBS = 0V TA = 25°C DRAIN SOURCE CURRENT (µA) DRAIN SOURCE CURRENT (mA) 1000 20 10V 15 8V 10 6V 5 4V 2V 0 2 6 8 10 500 6V 4V 2V 0 -500 -1000 -160 12 VGS = 12V -80 0 80 160 DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 VBS = 0V f = 1KHz 10 DRAIN SOURCE CURRENT (µA) 20 IDS = 10mA 5 TA = +25°C TA = +125°C 2 1 0.5 IDS = 1mA 0.2 0 DRAIN SOURCE ON RESISTANCE (KΩ) 4 2 4 6 10 15 VBS = 0V -4V -2V -6V 10 -8V -10V 5 -12V 12 0 0.8 1.6 2.4 3.2 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE 100 VDS = 0.2V VBS = 0V 10 TA = +125°C 1 TA = +25°C 0.1 VGS = VDS TA = 25°C 0 8 OFF DRAIN SOURCE CURRENT (pA) FORWARD TRANSCONDUCTANCE (mmho) 0 VBS = 0V TA = 25°C 0 2 1000 VDS = +12V VGS = VBS = 0V 100 10 1 4 6 8 10 12 GATE SOURCE VOLTAGE (V) ALD1106/ALD1116 4.0 -50 -25 0 +25 +50 +75 +100 +125 AMBIENT TEMPERATURE (°C) Advanced Linear Devices 3 ALD1106/ALD1116 Advanced Linear Devices 4