GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-01, AT002N5-10 Features -01 ■ Dual Control Voltages 0.220 (5.59 mm) 0.210 (5.33 mm) ■ Low Insertion Loss 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP. ■ Capable of Meeting MIL-STD Requirements5 0.268 (6.81 mm) 0.252 (6.40 mm) 0.45 (1.14 mm) TYP. Description The AT002N5-01 is a GaAs IC FET absorptive attenuator. It provides up to 50 dB variable attenuation from DC–3 GHz under non-reflective conditions. This attenuator is recommended for fast response AGC circuits for commercial and high reliability applications. The AT002N5-10 is the gullwing version of this device for surface mount applications. 0.160 (4.06 mm) 0.120 (3.05 mm) 0.031 (0.79 mm) MAX. 0.013 (0.33 mm) 0.007 (0.18 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 0.065 (1.65 mm) MAX. Electrical Specifications at 25°C Parameter1 Frequency4 Insertion Loss2 DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz Attenuation Range DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz VSWR (I/O) DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz Min. 50 48 45 Typ. Max. Unit 1.2 1.4 1.7 1.4 1.8 2.0 dB dB dB 55 52 48 dB dB dB 1.2:1 1.4:1 1.6:1 1.3:1 1.5:1 1.8:1 Typ. Max. Operating Characteristics at 25°C Parameter Condition Switching Characteristics Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru3 Input Power for 1 dB Compression For All Attenuation Levels Control Voltages VLow = 0 to -0.2 V @ 20 µA Max. VHigh = -5 V @ 100 µA Max. Frequency 0.5–3 GHz 0.05 GHz Min. Unit 10 15 20 ns ns mV 0 -3 dBm dBm 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. 4. DC = 300 kHz. 5. See Quality/Reliability section. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 9/99A 1 GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-01, AT002N5-10 Typical Transfer Curve F = 1 GHz, VP1 = 3.5 V 60 50 dB ± 4 dB 50 -1.0 -2.0 Attenuation (dB) V1 V2 Control Voltages (V) 0 V1 (Series) -3.0 V2 (Shunt) 40 dB ± 2 dB 40 30 dB ± 1 dB 30 20 dB ± 0.5 dB -4.0 20 -5.0 DC 10 DC 10 dB ± 0.2 dB 10 20 30 40 50 60 1 2 3 Relative Attenuation (dB) Frequency (GHz) Relative Attenuation vs. Control Voltages Attenuation (By State) vs. Frequency PIN at 1.0 dB Compression (dBm) 1. VP = FET pinchoff voltage Absolute Maximum Ratings F = 500 MHz 20 Characteristic 15 RF Input Power (RF In) 10 Control Voltage (VC) 5 Value 10 mW > 500 MHz 0/-8 V Control 4 mW 50 MHz -8 V Control +0.2 V, -10 V Operating Temperature (TOP) -55°C to +125°C Storage Temperature (TST) -65°C to +150°C Thermal Resistance (ΘJC) 25°C/W 0 -10 -5 0 5 10 15 20 25 0.345 (8.76 mm) ± 0.010 (0.25 mm) 30 Attenuation (dB) 0.215 (5.46 mm) Attenuation vs. 1.0 dB Compression Point Pin Out 0.385 (9.78 mm) ± 0.010 (0.25 mm) 0.080 (2.03 mm) TYP. 0.045 (1.14 mm) TYP. GND 0.268 (6.81 mm) 0.252 (6.40 mm) 0.063 (1.60 mm) TYP. 0.013 (0.33 mm) 0.007 (0.18 mm) J1 2 0.130 (3.30 mm) TYP. 0.065 (1.65 mm) MAX. 0.030 (0.76 mm) 0.015 (0.038 mm) GND V1 V2 GND J2 0.007 (0.18 mm) 0.003 (0.08 mm) 0.060 (1.52 mm) TYP. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 9/99A 0.029 (0.74 mm) TYP.