ALPHA AV101-12

HIP3™ Variable Attenuator
0.80–1.00 GHz
AV101-12
Features
■ +50 dBm IP3 Typical
SOI
■ Low Loss 1 dB Typical
C-8
SOI
C-8
■ Attenuation 30 dB Typical
■ Good VSWR <1.5:1 Typical
■ Small SOIC-8 Package
Description
The AV101-12 is a current controlled variable attenuator
from Alpha’s series of HIP3™ components. It is designed
to meet the wide dynamic range required in spread
spectrum wireless base station applications. A monolithic
quadrature hybrid is teamed with a silicon PIN diode pair
in a plastic surface mount package reducing size and
assuring consistency from part to part.
Electrical Specifications at 25°C
Parameter
Min.
Frequency
Typ.
0.80
Insertion Loss (0 mA Control Current)
1
Attenuation @ 3.0 mA Control Current (900 MHz)
18.5
VSWR All Ports
1.5
Input 3rd Order Intercept
+47
Group Delay
Max.
Unit
1.00
GHz
1.5
dB
21.5
dB
1.8
+50
dBm
0.9
1.2
ns
Typ.
Max.
Unit
5
8
5
µs
µs
mV
Operating Characteristics at 25°C (0, +5 V)
Parameter1
Switching
Characteristics2
Condition
Frequency
Min.
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru (Peak)
Maximum Input Power for <1 dB
Attenuation Variation
+15
dBm
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. 0–4 mA square wave total control current.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 6/01A
1
HIP3™ Variable Attenuator 0.80–1.00 GHz
AV101-12
Typical Performance Data
1.5
0.0
Input
Attenuation (dB)
VSWR (:1)
800 MHz
-10.0
1.4
1.3
1.2
Output
1.1
-20.0
-30.0
900 MHz
-40.0
1000 MHz
-50.0
-60.0
1.0
0.0000
0.0010
0.0020
0.0030
0.0040
-70.0
0.0000
0.0050
0.0010
Current (Amps)
0.0030
0.0040
1.5
0.0
1.4
-5.0
1.3
Input
0.0 mA
0.2 mA
0.9 mA
-10.0
1.9 mA
-15.0
2.8 mA
-20.0
1.1
Output
1.0
0.0000
0.0010
0.0020
0.0030
0.0040
-25.0
0.80
0.0050
0.85
0.90
0.95
Frequency (GHz)
Input/Output VSWR vs. Current
@ 900 MHz
Attenuation vs. Frequency
1.00
10
Diode Current (mA)
1.4
VSWR (:1)
3.5 mA
Current (Amps)
1.5
Output
1.3
1.2
Input
1.1
1.0
0.0000
2
0.0050
Attenuation vs. Current
Attenuation (dB)
VSWR (:1)
Input/Output VSWR vs. Current
@ 800 MHz
1.2
0.0020
Current (Amps)
0.0010
0.0020
0.0030
0.0040
0.0050
1
0.1
0.01
400
600
800
1000
Current (Amps)
Diode Voltage (mV)
Input/Output VSWR vs. Current
@ 1000 MHz
Typical PIN Diode Current vs. Voltage
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 6/01A
HIP3™ Variable Attenuator 0.80–1.00 GHz
Pin Out
AV101-12
Connection Diagram
680 Ω
CONTROL
CURRENT
RF OUT
220 pF
220 pF
100 nH
100 nH
CONTROL
CURRENT
1
8
CONTROL
CURRENT
GND
2
7
GND
CONTROL
CURRENT
RF IN
6
GND
5
4
RF In
3
GND
RF Out
SOIC-8
PIN 8
0.050 (1.27 mm) BSC
Absolute Maximum Ratings
Characteristic
Value
RF Input Power
0.5 W CW, 4 W @ 12.5%
Duty Cycle
Control Current
50 mA per Diode
Operating Temperature
-40 to +85°C
Storage Temperature
-40 to +85°C
Maximum Reverse Diode Voltage
-10 V
Electrostatic Discharge
0.244 (6.20 mm)
0.228 (5.80 mm)
PIN 1
INDICATOR
PIN 1
0.068
(1.73 mm) MAX.
0.020 (0.51 mm) MAX.
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45˚ CHAMFER
+125 V
Note: Operating this device above any of these parameters may cause
irreversible damage.
0.197 (5.00 mm)
0.189 (4.80 mm)
0.010 (0.25 mm)
0.004 (0.10 mm)
Recommended Board Layout
0.158 (4.00 mm)
0.150 (3.80 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
8˚
MAX.
0.1630
0.0200 DIA.
VIA 4 PLACES
0.0555 TYP.
0.0190 TYP.
Material is 10 mil FR4.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 6/01A
3