HIP3™ Variable Attenuator 0.80–1.00 GHz AV111-12 Features ■ +40 dBm IP3 Typical SOI ■ Low Loss 1 dB Typical C-8 SOI C-8 ■ Attenuation 30 dB Typical ■ Good VSWR <1.5:1 Typical ■ Low Phase Shift Description The AV111-12 is a current controlled variable attenuator from Alpha’s series of HIP3™ components. It is designed to meet the wide dynamic range required in spread spectrum wireless base station applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package reducing size and assuring consistency from part to part. Electrical Specifications at 25°C Parameter Min. Frequency Typ. 0.80 Insertion Loss (0 mA Control Current) 1.0 Attenuation @ 1.2 mA Control Current (900 MHz) 17.5 VSWR All Ports 1.5 Input 3rd Order Intercept +37 Relative Phase Shift Up to 20 dB Attenuation1 Group Delay Max. Unit 1.0 GHz 1.5 dB 21.5 dB 1.8 +40 dBm 7 10 Deg. 0.4 0.9 ns Typ. Max. Unit 5 8 5 µs µs mV +15 dBm Operating Characteristics at 25°C (0, +5 V) Parameter2 Switching Characteristics3 Condition Frequency Min. Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru (Peak) Maximum Input Power for <1 dB Attenuation Variation 1. When built with external components as shown in the Pin Out diagram. 2. All measurements made in a 50 Ω system, unless otherwise specified. 3. 0–4 mA square wave total control current. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/01A 1 HIP3™ Variable Attenuator 0.80–1.00 GHz AV111-12 Typical Performance Data 1.70 0 -5 1.60 800 MHz -10 Attenuation (dB) VSWR 1.50 1.40 1 GHz 1.30 1.20 900 MHz 0.5 1.0 1.5 2.0 2.5 -35 3.0 1000 MHz 900 MHz 800 MHz 0 0.5 1.0 1.5 2.0 Current (mA) Current (mA) Input/Output VSWR vs. Current Attenuation vs. Current 24 0 1.4 mA 0 mA 0.1 mA -5 16 12 8 1.2 mA 4 1.0 mA 0 0.80 0.84 0.88 0.92 Attenuation (dB) 20 0.5 mA 0 mA 1.00 0.96 0.5 mA -10 0.9 mA -15 -20 1.2 mA -25 -30 0.80 0.85 0.90 0.95 Frequency (GHz) Frequency (GHz) Relative Phase vs. Frequency Attenuation vs. Frequency 25 15 10 900 MHz 5 0 -5 1.4 mA 1.00 100 1000 MHz 20 Current (mA) Relative Phase Shift (Degrees) -30 -50 0 Relative Phase Shift (Degrees) -25 -45 1.00 800 MHz -10 1 0.1 -15 -20 -25 -35 2 -20 -40 1.10 10 -15 0.01 -30 -25 -20 -15 -10 -5 0 400 500 600 700 800 900 1000 Attenuation (dB) Voltage (V) Relative Phase vs. Attenuation Typical PIN Diode Current vs. Voltage Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/01A HIP3™ Variable Attenuator 0.80–1.00 GHz Pin Out AV111-12 Connection Diagram 680 Ω CONTROL CURRENT RF OUT 220 pF 220 pF 100 nH 100 nH CONTROL CURRENT 1 8 CONTROL CURRENT GND 2 7 GND CONTROL CURRENT RF IN 6 GND 5 4 RF In 3 GND RF Out SOIC-8 PIN 8 0.050 (1.27 mm) BSC Absolute Maximum Ratings Characteristic Value RF Input Power 0.5 W CW, 4 W @ 12.5% Duty Cycle Control Current 50 mA per Diode Operating Temperature -65 to +125°C Storage Temperature -65 to +125°C Maximum Reverse Diode Voltage -100 V Electrostatic Discharge +125 V Note: Operating this device above any of these parameters may cause irreversible damage. SK38531 PIN 1 0.068 (1.73 mm) MAX. 0.197 (5.00 mm) 0.189 (4.80 mm) 0.010 (0.25 mm) 0.004 (0.10 mm) Recommended Board Layout RF In/Out 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR 0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45˚ CHAMFER 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 8˚ MAX. RF In/Out 20 mil Diameter Ground Via Pin 1 AV10✳-12 0.018 22 nH Bias Input 680 Ω 120 pF Material is 10 mil FR4. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/01A 3