AF8958C P & N-Channel 30-V (D-S) MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) 30 -30 rDS(on) (mΩ) ID (A) 40@VGS=4.5V 28@VGS=10V 80@VGS=-4.5V 52@VGS=-10V 6.0 7.0 -4.0 -5.2 Pin Assignments S1 1 Pin Descriptions 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SOP-8 Pin Name Description S1 G1 D1 S2 G2 D2 Source (NMOS) Gate (NMOS) Drain (NMOS) Source (PMOS) Gate (PMOS) Drain (PMOS) Ordering information Feature F :MOSFET A X 8958C X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Jul 16, 2004 1/4 AF8958C P & N-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Parameter N-Channel 30 20 TA=25ºC 7 Continuous Drain Current (Note 1) TA=70ºC 5.6 Pulsed Drain Current (Note 2) 20 Continuous Source Current (Diode Conduction) (Note 1) 1.3 TA=25ºC 2.1 Power Dissipation (Note 1) 1.3 TA=70ºC Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage P-Channel -30 -20 -5.2 -6.8 -20 -1.3 2.1 1.3 -55 to 150 Units V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) Maximum 40 60 t < 5 sec t < 5 sec Units ºC/W ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Symbol Parameter Test Conditions Ch Limits Min. Typ. Max. 30 -30 1 -1.0 20 -20 - 3 -3 ±100 ±100 1 -1 28 40 52 80 - Unit Static V(BR)DSS VGS(th) Drain-Source breakdown Voltage Gate-Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current (Note 3) rDS(on) Drain-Source On-Resistance gfs (Note 3) Forward Tranconductance (Note 3) VGS=0V, ID=250uA VGS=0V, ID=-250uA VDS= VGS, ID=250uA VDS= VGS, ID=-250uA VGS=20V, VDS=0V VGS=-20V, VDS=0V VDS=24V, VGS=0V VDS=-24V, VGS=0V VDS=5V, VGS=10V VDS=-5V, VGS=-10V VGS=10V, ID=7A VGS=4.5V, ID=6A VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VDS=15V, ID=7A VDS=-15V, ID=-5A Anachip Corp. www.anachip.com.tw N P N P N P N P N P N P N P 1.95 -1.7 19 24 42 65 25 10 V V nA uA A mΩ S Rev. 1.0 Jul 16, 2004 2/4 AF8958C P & N-Channel 30-V (D-S) MOSFET Specifications (TA=25ºC unless otherwise noted) Symbol Parameter Test Conditions Ch Limits Min. Typ. Max. Unit Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge N-Channel VDS=15V, VGS=10V ID=7A P-Channel VDS=-15V, VGS=-10V ID=-5A N P N P N P - 10.7 10 1.7 2.2 2.1 1.7 26 13 - nC N-Channel VDD=15, VGS=10V ID=1A, RGEN=6Ω P-Channel VDD=-15, VGS=-10V ID=-1A, RGEN=6Ω N P N P N P N P - 8 7 5 13 23 14 3 9 16 14 10 24 37 25 6 17 nS Switching td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw Rev. 1.0 Jul 16, 2004 3/4 AF8958C P & N-Channel 30-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 8958C AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information H E Package Type: SOP-8L L VIEW "A" D 0.015x45 C B A1 e 7 (4X) A A2 7 (4X) VIEW "A" y Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 O O 8 0 Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 O O 0 8 Rev. 1.0 Jul 16, 2004 4/4