AF4910N Dual N-Channel 30-V (D-S) MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) rDS(on) (mΩ) ID (A) 30 13.5@VGS=10V 20@VGS=4.5V 10 8 Pin Assignments Pin Descriptions S1 1 8 D1 Pin Name Description G1 2 7 D1 S2 3 6 D2 S1/2 G1/2 D1/2 Channel 1/2 Source Channel 1/2 Gate Channel 1/2 Drain G2 4 5 D2 SOP-8 Ordering information Feature F :MOSFET A X 4910N X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 1/5 AF4910N Dual N-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM IS Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25ºC Power Dissipation (Note 1) TA=70ºC Operating Junction and Storage Temperature Range PD TJ, TSTG Rating 30 ±20 10 8.2 ±50 2.3 2.1 1.3 -55 to 150 Units V V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) Maximum 40 60 t < 5 sec t < 5 sec Units ºC/W ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Symbol Parameter Static V(BR)DSS Drain-Source breakdown Voltage VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current (Note 3) rDS(on) Drain-Source On-Resistance (Note 3) gfs Forward Tranconductance (Note 3) VSD Diode Forward Voltage Dynamic (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time trr Source-Ddrain Reverse Recovery Time Test Conditions VGS=0V, ID=250uA VDS= VGS, ID=250uA VDS=0V, VGS=20V VDS=24V, VGS=0V VDS=24V, VGS=0V, TJ=55ºC VDS=5V, VGS=10V VGS=10V, ID=10A VGS=4.5V, ID=8A VGS=10V, ID=15A, TJ=55ºC VDS=15V, ID=10A IS=2.3A, VGS=0V VDS=15V, VGS=5V, ID=10A VDD=25, RL=25Ω, ID=1A, VGEN=10V IF=2.3A, Di/Dt=100A/us Min. Limits Typ. Max. 30 1 - 1.95 - 3.0 ±100 1 - - 25 20 - 11 15 13.5 20 - 12.5 15 - 40 0.7 1.1 S V - 20 7.0 7.0 34 - nC - 20 9 70 20 41 30 20 102 81 80 nS Unit V V nA uA A mΩ Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw Rev. 1.1 Jul 20, 2004 2/5 AF4910N Dual N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw Rev. 1.1 Jul 20, 2004 3/5 AF4910N Dual N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw Rev. 1.1 Jul 20, 2004 4/5 AF4910N Dual N-Channel 30-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 4910 N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information H E Package Type: SOP-8L L VIEW "A" D 0.015x45 7 (4X) e B A1 C A A2 7 (4X) VIEW "A" y Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0O 8O Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Rev. 1.1 Jul 20, 2004 5/5