VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG (D) A FEATURES: B .080x45° • PG = 14 dB Typical at 175 MHz • η D = 55% Typ. at POUT = 300 Watts • Omnigold™ Metalization System E .1925 D FULL R D D (4X).060 R M C G G F Sources are connected to flange G H N I L J MAXIMUM RATINGS K ID 16 A V(BR)DSS 65 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 MAXIMUM .230 / 5.84 .210 / 5.33 B .125 / 3.18 C D .380 / 9.65 .390 / 9.91 .580 / 14.73 .620 / 15.75 VDGR 65 V E VGS ± 40 V G 1.090 / 27.69 1.105 / 28.07 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .100 / 2.54 .115 / 2.92 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 PDISS O 300 W @ TC = 25 C O O TJ -65 C to +200 C T STG -65 OC to +150 OC θ JC 0.6 OC/W CHARACTERISTICS SYMBOL .435 / 11.05 F .230 / 5.84 L ORDER CODE: ASI10707 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VDS = 28 V VGS = 0 V 5.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA VGS VDS = 10 V ID = 100 mA 5.0 V VDS VGS = 10 V ID = 10 A 1.5 V GFS VDS = 10 V ID = 5 A Ciss Coss Crss VGS = 28 V GPS ηD VDD = 28 V f = 175 MHz VDS = 0 V IDQ = 2 x 250 mA 65 V 1.0 3500 F = 1.0 MHz POUT = 300 W 12 50 mS 375 188 26 pF 14 55 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004