ASI HSCH5531

HSCH5531
BEAM LEAD SCHOTTKY DIODE
DESCRIPTION:
PACKAGE STYLE 711
The ASI HSCH5531 is a Low Barrier
Beam Lead Schottky Diode Designed
for K-Band Mixer Applications.
MAXIMUM RATINGS
IF
25 mA
VR
4.0 V
PDISS
150 mW @ TA = 25 °C
TJ
-65 °C to +175 °C
TSTG
-65 °C to +200 °C
NONE
CHARACTERISTICS
SYMBOL
TC = 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
VBR
IR = 10 µA
VF
IF = 1.0 mA
375
mV
∆VF
IF = 1.0 mA
10
mV
IR
VR = 1.0 V
100
nA
RD
IF = 5.0 mA
20
Ω
∆ RD
IF = 5.0 mA
3.0
Ω
V
4.0
CT
VR = 0 V
f = 1.0 MHz
0.10
pF
∆ CT
VR = 0 V
f = 1.0 MHz
0.02
pF
TSS
γ
RV
Zero Bias, Zero Bias,
PIN = -30 dBm
Video Badwidth = 2.0 MHz
f = 10 GHz
RL = 10 MΩ
-46
17
1.4
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
dBm
mV/µW
Ω
MΩ
REV. A
1/1