1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 DESCRIPTION: The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose applications. MAXIMUM RATINGS IR 20 nA VR 70 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C θJC 250 °C/W NONE CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS VBR IR = 10 µA IR VR = 60 V MINIMUM TYPICAL CT4/CT60 Q UNITS V 65 TA = 150 °C CT MAXIMUM 20 nA 20 µA VR = 4.0 V f = 1.0 MHz 77.9 86.1 pF VR = 4.0 V/VR = 60 V f = 1.0 MHz 3.2 3.4 -- VR = 4.0 V f = 50 MHz 150 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. -- REV. A 1/1