UFT15-28S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: .112x45° A The ASI UFT15-28S is Designed for B FEATURES: ØC • • • Omnigold™ Metalization System D H J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 10 A VCB 60 V 35 V VCE PDISS O 140 W @ TC = 25 C -65 OC to +200 OC TJ O -65 C to +150 C θ JC 1.5 OC/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10665 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PGE VCE = 25 V IMD3 MAXIMUM DIM J O TSTG SYMBOL I PREF = 16 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz UNITS 35 13.5 mA 100 --- 80 pF 14.5 Snd. = -7 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 dB -55 dBc REV. A 1/1