ASAT30 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG(A) DESCRIPTION: A .020 x 45° Ø .130 NOM. The ASI ASAT30 is Designed for .050 x 45° D C FEATURES: • • • Omnigold™ Metalization System L B M E F G H J K I MAXIMUM RATINGS MAXIMUM DIM MINIMUM inches / mm inches / mm 10 A A .055 / 1.40 .065 / 1.65 VCB 60 V C .243 / 6.17 .253 / 6.43 D .635 / 16.13 .665 / 16.89 E .555 / 14.10 .565 / 14.35 VCE 35 V F .739 / 18.77 .749 / 19.02 G .315 / 8.00 .325 / 8.26 H .002 / 0.05 .006 / 0.15 I .055 / 1.40 .065 / 1.65 J .075 / 1.91 .095 / 2.41 IC PDISS 140 W @ TC = 25 OC O O -65 C to +200 C TJ .124 / 3.15 B .190 / 4.83 K .245 / 6.22 L TSTG -65 OC to +150 OC θ JC 3.5 OC/W CHARACTERISTICS SYMBOL ORDER CODE: ASI10521 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 Ma ICES VE = 28 V hFE VCE = 5.0 V IC = 1.0 A VCC = 28 V GHz POUT = 30 W PGE ηC .255 / 6.48 .092 / 2.34 M MINIMUM TYPICAL MAXIMUM RBE = 10 Ω 35 V 60 V 4.0 V 10 f = 1.65 UNITS 5 mA 100 --- 9.0 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1