UML1T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-39 The ASI UML1T is Designed for B C 45° ØA FEATURES: • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC 0.4 A VCBO 55 V VCEO 30 V VEBO PDISS O 5.0 W @ TC = 25 C .200 / 5.080 B .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .335 / 8.510 .370 / 9.370 E .305 / 7.750 .335 / 8.500 F .240 / 6.100 -65 OC to +200 OC θ JC 35.0 OC/W CHARACTERISTICS SYMBOL IC = 5 mA BVCER IC = 5 mA BVCBO .016 / 0.407 H .020 / 0.508 ORDER CODE: ASI10690 O TC = 25 C NONETEST CONDITIONS BVCEO .260 / 6.600 .500 / 12.700 G TSTG inches / mm inches / mm A 3.5 V MAXIMUM MINIMUM DIM -65 OC to +200 OC TJ H G MINIMUM TYPICAL MAXIMUM UNITS 30 V 55 V IC = 0.1 mA 55 V BVEBO IE = 0.1 mA 3.5 V ICEO VCE = 28 V ICEX VC = 55 V VBE = -1.5 V VCE = 5.0 V IC = 50 mA IC = 360 mA hFE COB VCB = 28 V PGE ηD VCC = 28 V RBE = 10 Ω 10 5 f = 1.0 MHz POUT = 1.0 W f = 400 MHz 10 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 20 µA 100 µA 200 --- --- 5.0 pF dB % REV. A 1/1