TVU025 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .450 BAL FLG(A) The ASI TVU 025 is Designed for .060x45° B A FEATURES: C FULL R .100x45° E D • Input Matching Network • • Omnigold™ Metalization System P F G H K J M MAXIMUM RATINGS MINIMUM DIM IC 8.0 A VCBO 45 V VCEO 30 V VEBO 3.0 V .130 / 3.30 .120 / 3.05 .785 / 19.94 C D .455 / 11.56 E .120 / 3.05 TJ -50 OC to +200 OC TSTG -50 OC to +150 OC θ JC 1.3 OC/W .465 / 11.81 .130 / 3.30 .230 / 5.84 F 135 W @ TC = 25 C G .838 / 21.28 .850 / 21.59 H 1.095 / 27.81 1.105 / 28.07 J .525 / 13.34 .535 / 13.59 K .002 / 0.05 .005 / 0.15 L .055 / 1.40 .065 / 1.65 M .080 . 2.03 .095 / 2.41 .445 / 11.30 .455 / 11.56 .195 / 4.95 N P SYMBOL inches / mm .055 / 1.40 A O CHARACTERISTICS MAXIMUM inches / mm B PDISS N L ORDER CODE: ASI10650 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 45 V BVCEO IC = 200 mA 30 V BVEBO IE = 10 mA 3.0 V ICEO VCE = 25 V hFE VCE = 5.0 V COB VCB = 28 V PG IMD1 VCE = 25 V POUT = 25 W IC = 3.0 A 10 f = 1.0 MHz IC = 3.2 A f = 860 MHz 70 8.0 -45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 80 --pF dB dBc REV. A 1/1