SA3317-V / SA3317-V(B) Semiconductor High Brightness LED Lamp Features • Colorless transparency lens type • φ3mm(T-1) all plastic mold type • Super luminosity Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 3.0±0.2 3.0±0.2 5.3±0.2 5.3±0.2 2.9±0.2 2.9±0.2 5.2±0.5 0.5 23.0MIN 0.5 23.0MIN 1.0MIN 1.0MIN 2.54 NOM 2.54 NOM 12 3.6±0.2 12 3.6±0.2 3.8±0.2 3.8±0.2 PIN Connections 1.Anode 2.Cathode KLA-0013-000 1 SA3317-V / SA3317-V(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 85 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min Typ Max Unit Forward Voltage VF IF= 20mA - 2.0 2.7 V Luminous Intensity IV IF= 20mA - 1000 - mcd λP Δλ IR IF= 20mA - 640 - nm IF= 20mA - 30 - nm VR=4V - - 10 uA IF= 20mA - ±22 - deg Peak Wavelength Spectrum Bandwidth Reverse Current 3 * Half Angle θ1/2 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLA-0013-000 2 SA3317-V / SA3317-V(B) Characteristic Diagrams Fig. 1 IF - VF Luminous Intensity Iv [mcd] Forward Current IF [mA] Fig. 2 IV - IF Forward Voltage VF [V] Forward Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF – Ta Current IF [mA] Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram 100 50 0 50 100 Relative Luminous Intensity Iv [%] KLA-0013-000 3