SY5311-V / SY5311-V(B) Semiconductor High Brightness LED Lamp Features • Colorless transparency lens type • φ5mm(T-1¾) all plastic mold type • Super luminosity Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 5.0±0.2 5.0±0.2 8.6±0.2 8.6±0.2 0.8±0.2 0.8±0.2 4.0±0.5 0.5 0.5 23.0 MIN 23.0 MIN 1.0MIN 1.0MIN 2.54NOM 1 2 2.54NOM 5.8±0.2 1 2 5.8±0.2 PIN Connections 1.Anode 2.Cathode KLY-0001-000 1 SY5311-V / SY5311-V(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 85 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 3 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 20mA - 2.0 2.7 V Luminous Intensity IV IF= 20mA - 1200 - mcd λP Δλ IR IF= 20mA - 592 - nm IF= 20mA - 30 - nm VR=4V - - 10 uA θ1/2 IF= 20mA - ±10 - deg Peak Wavelength Spectrum Bandwidth Reverse Current *3Half angle *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLY-0001-000 2 SY5311-V / SY5311-V(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF – Ta Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLY-0001-000 3