SDB1040 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability • Low IR (IR=10uA Typ) Ordering Information Type No. Marking SDB1040 Package Code 1A4 SOD-123 Outline Dimensions unit : mm 3.4~3.6 1.5~1.7 2.6~2.8 1 2 1 0.15 0.72~0.78 0.87~0.93 2 0.70 PIN Connections 1. Anode 2. Cathode KSD-3032-000 1 SDB1040 Absolute maximum ratings Ta=25°C Characteristic Symbol Rating Unit Peak reverse voltage VRM 40 V Reverse voltage VR 40 V Average Rectified Forward current IF 1.0 A IFSM 3 A Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Non-repetitive peak surge forward current Electrical Characteristics Characteristic Ta=25°C Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=1A - 0.5 0.55 V Reverse current IR VR=40V - - 200 µA Total capacitance CT VR=10V, f=1MHZ - 50 - pF * Pulse Test : Pulse width ≤250us, Duty ≤ 2% KSD-3032-000 2 SDB1040 Electrical Characteristic Curves 00 Fig. 2 Reverse Characteristics Fig. 1 Forward Characteristics Fig. 4 IF – PF Forward Power dissipation Fig. 3 Total Capacitance KSD-3032-000 3 SDB1040 These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.). AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation with AUK. KSD-3032-000 4