SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V (@ IF=10mA) • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 2 1 2 1 PIN Connections 1. Anode 2. Cathode KSD-E009-003 1 SDB110Q Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit VR 10 V IFSM* 2 A Forward current IF 30 mA Junction temperature Tj 150 °C Tstg -55 ~ 150 °C Reverse voltage Non-repetitive peak surge current Storage temperature range * 60Hz for 1 Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Forward voltage 1 VF(1) IF=1mA 0.1 - 0.3 V Forward voltage 2 VF(2) IF=10mA - - 0.4 V Forward voltage 3 VF(3) IF=30mA - - 0.5 V Reverse current 1 IR(1) VR=5V - - 0.5 ㎂ Reverse current 2 IR(2) VR=10V - - 1 ㎂ Total capacitance CT VR=5V, f=1MHz - 4.2 - pF KSD-E009-003 2 SDB110Q Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-E009-003 3 SDB110Q These AUK Corp. products are intended for usage in general electronic equipment (Office and communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these AUK products in equipm- ents which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.) AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation KSD-E009-003 4