SUR566EF Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR566EF Marking Package Code 5X SOT-563F Outline Dimensions unit : 3 R1 2 R2 1 R2 Tr2 R1 4 mm 5 R1 Tr1 6 R2 Tr1 10KΩ 47KΩ Tr2 10KΩ 47KΩ PIN Connections 1. Emitter 1 2. Emitter 2 3. Base 2 4. Collector 2 5. Base 1 6. Collector 1 KST-J005-000 1 SUR566EF Absolute maximum ratings (Tr1, Tr2) Characteristic Ta=25°C Symbol Ratings Unit Out Voltage VO 50 V Input Voltage VI 20 V Out Current IO 100 mA Power Dissipation PD 100 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C Electrical Characteristics(Tr1, Tr2 : NPN) Characteristic Output Cut-off Current DC Current Gain Symbol IO(OFF) GI Ta=25°C Test Condition VO=50V, VI=0 VO=5V, IO=10mA Min. Typ. Max. Unit - - 500 nA 80 150 - - Output Voltage VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V Input Voltage (ON) VI(ON) VO=0.2V, IO=5mA - - 1.8 V Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1mA 0.5 - - V VO=10V, IO=5mA - 200 - MHz VI=5V - - 0.88 mA * Transition Frequency fT Input Current II * : Characteristic of Transistor Only KST-J005-000 2 SUR566EF Electrical Characteristic Curves Tr1, Tr2 : NPN Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KST-J005-000 3