SUR499H Semiconductor Epitaxial Planar PNP Transistor Descriptions • General purpose application • Two SRA2205 chips in SOT-353 package Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information Type NO. Marking SUR499H Package Code Y1 SOT-353 Outline Dimensions unit : mm 2.1 BSC 3 2 1 1.25 BSC 5 2.0 BSC 4 4 0.25 Min. 5 R1 R2 Tr1 2.2KΩ 47K Ω Tr2 2.2K Ω 47K Ω PIN Connections 1. Base 1 2. Emitter 1,2 3. Base 2 4. Collector 2 5. Collector 1 0.1~0.25 0~0.1 0.9±0.1 0.15~0.30 2 3 Tr1 Tr2 1.30 BSC 1 KST-5008-000 1 SUR499H Absolute maximum ratings Characteristic Symbol Ratings Unit Output voltage VO -50 V Input voltage VI -12 V Output current IO -100 mA Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics Characteristic Output out-off current Symbol IO(OFF) Test Condition VO =-50V, VI =0 VO =-5V, IO =-10mA Min. Typ. Max. Unit - - -500 nA 80 200 - - DC current gain GI Output voltage VO(ON) IO =-10m, II =-0.5mA - -0.1 -0.3 V Input voltage(ON) VI(ON) VO =-0.2V, IO =-5mA - - -1.1 V Input voltage(OFF) VI(OFF) VO =-5V, IO =-0.1mA -0.4 - - V Transistor frequency fT* VO =-10V, IO =-5mA - 200 - MHz Input current II VI=-5V - - -3.6 mA * : Characteristic of transistor only KST-5008-000 2 SUR499H Electrical Characteristic Curves Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KST-5008-000 3