BSI Very Low Power/Voltage CMOS SRAM 512K X 8 bit FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 29mA (@55ns) operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 68mA (@55ns) operating current I -grade: 70mA (@55ns) operating current C-grade: 58mA (@70ns) operating current I -grade: 60mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Fully static operation BS62LV4006 • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • Three state outputs and TTL compatible DESCRIPTION The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) , and active LOW output enable (OE) and three-state output drivers. The BS62LV4006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV4006 is available in the JEDEC standard 32L SOP, TSOP , PDIP, TSOP II and STSOP package. PRODUCT FAMILY PRODUCT FAMILY BS62LV4006TC BS62LV4006STC BS62LV4006SC BS62LV4006EC BS62LV4006PC BS62LV4006TI BS62LV4006STI BS62LV4006SI BS62LV4006EI BS62LV4006PI OPERATING TEMPERATURE O O • BS62LV4006SC BS62LV4006SI BS62LV4006EC BS62LV4006EI BS62LV4006PC BS62LV4006PI • A11 A9 A8 A13 WE A17 A15 VCC A18 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 BS62LV4006TC BS62LV4006STC BS62LV4006TI BS62LV4006STI 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 STANDBY Operating ( I CCSB1 , Max ) 55ns :3.0~5.5V 70ns :2.7~5.5V Vcc = 3.0V 70ns Vcc =5.0V 70ns 55 / 70 5uA 30uA 24mA 58mA O 2.4V ~ 5.5V 55 / 70 10uA 60uA 25mA 60mA C to +85 C PKG TYPE ( I CC , Max ) Vcc = 3.0V Vcc =5.0V 2.4V ~ 5.5V TSOP - 32 STSOP -32 SOP - 32 TSOP2 - 32 PDIP - 32 TSOP - 32 STSOP - 32 SOP - 32 TSOP2 - 32 PDIP - 32 BLOCK DIAGRAM PIN CONFIGURATIONS A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND POWER DISSIPATION SPEED ( ns ) O +0 C to +70 C - 40 Vcc RANGE VCC A15 A17 WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A13 A17 A15 A18 A16 A14 A12 A7 A6 A5 A4 Address Input Buffer 22 2048 Row Memory Array 2048 X 2048 Decoder 2048 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 8 8 Data Input Buffer Data Output Buffer Column I/O 8 8 Write Driver Sense Amp 256 Column Decoder 16 CE WE Control Address Input Buffer OE Vdd GND A11 A9 A8 A3 A2 A1 A0 A10 Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. R0201-BS62LV4006 1 Revision 1.1 Jan. 2004 BSI BS62LV4006 PIN DESCRIPTIONS Name Function A0-A18 Address Input These 19 address inputs select one of the 524,288 x 8-bit words in the RAM CE Chip Enable Input CE is active LOW. Chip enables must be active when data read from or write to the device. if chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. DQ0-DQ7 Data Input/Output Ports These 8 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply GND Ground TRUTH TABLE MODE WE CE OE I/O OPERATION Vcc CURRENT Not selected X H X High Z ICCSB, ICCSB1 Output Disabled H L H High Z ICC Read H L L DOUT ICC Write L L X DIN ICC ABSOLUTE MAXIMUM RATINGS(1) SYMBOL PARAMETER with OPERATING RANGE RATING UNITS -0.5 to Vcc+0.5 V VTERM Terminal Voltage Respect to GND TBIAS Temperature Under Bias -40 to +85 O C TSTG Storage Temperature -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA RANGE Commercial Industrial O O 0 C to +70 C O O -40 C to +85 C Vcc 2.4V ~ 5.5V 2.4V ~ 5.5V CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. R0201-BS62LV4006 AMBIENT TEMPERATURE 2 CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V 6 pF VI/O=0V 8 pF 1. This parameter is guaranteed and not 100% tested. Revision 1.1 Jan. 2004 BSI BS62LV4006 DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC ) PARAMETER NAME PARAMETER TEST CONDITIONS Guaranteed Input Low Voltage(3) Guaranteed Input High Voltage(3) VIL VIH Vcc = 3.0 V Vcc = 5.0 V Vcc = Max, VIN = 0V to Vcc ILO Output Leakage Current Vcc = Max, CE = VIH, or OE = VIH, VI/O = 0V to Vcc VOL ICC (5) V 2.0 2.2 -- Vcc+0.3 V -- -- 1 uA -- -- 1 uA V V Vcc = 3.0 V Output High Voltage Vcc = Min, I OH = -1.0mA Operating Power Supply Current CE = VIL, IDQ = 0mA, F=Fmax (2) Standby Current-TTL CE = VIH, IDQ = 0mA Standby Current-CMOS CE ≧ Vcc-0.2V, VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V Vcc = 5.0 V 70ns Vcc = 3.0 V 70ns Vcc = 5.0 V -- -- 0.4 0.4 2.4 2.4 -- -- -- -- -- -- 25 ICCSB1 (4) Vcc = 5.0 V Vcc = 3.0 V -- Vcc = 5.0 V mA 60 0.5 Vcc = 3.0 V ICCSB UNITS 0.8 0.8 Vcc = 3.0 V Vcc = 5.0 V Vcc = Max, IOL = 2.0mA Output Low Voltage MAX. -- Vcc = 5.0 V Input Leakage Current (1) -0.5 Vcc = 3.0 V IIL VOH MIN. TYP. mA 1.0 0.45 10 2.0 60 uA 1. Typical characteristics are at TA = 25oC. 2. Fmax = 1/tRC . 3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 4. IccSB1_MAX. is 5uA/30uA at Vcc=3.0V/5.0V and TA=70oC. 5. Icc_MAX. is 30mA(@3.0V)/70mA(@5.0V) under 55ns operation. DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC ) SYMBOL PARAMETER TEST CONDITIONS VDR Vcc for Data Retention CE ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V ICCDR Data Retention Current CE ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V tCDR Chip Deselect to Data Retention Time tR See Retention Waveform Operation Recovery Time MIN. TYP. (1) MAX. UNITS 1.5 -- -- V -- 0.3 1.3 uA 0 -- -- ns TRC (2) -- -- ns 1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time 3. IccDR_MAX. is 0.8uA at TA=70OC. LOW VCC DATA RETENTION WAVEFORM ( CE Controlled ) Data Retention Mode Vcc VDR ≥ 1.5V Vcc CE R0201-BS62LV4006 VIH Vcc tR t CDR CE ≥ Vcc - 0.2V 3 VIH Revision 1.1 Jan. 2004 BSI BS62LV4006 KEY TO SWITCHING WAVEFORMS AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times WAVEFORM INPUTS OUTPUTS 1V/ns MUST BE STEADY MUST BE STEADY Input and Output Timing Reference Level 0.5Vcc MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L Output Load CL = 30pF+1TTL CL = 100pF+1TTL MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H , DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC ) READ CYCLE JEDEC PARAMETER NAME PARAMETER NAME t AVAX t AVQV t ELQV t GLQV t ELQX t GLQX t EHQZ t GHQZ tRC t AA t ACS tOE tCLZ tOLZ tCHZ tOHZ t AXOX tOH CYCLE TIME : 55ns (Vcc = 3.0~5.5V) MIN. TYP. MAX. DESCRIPTION CYCLE TIME : 70ns (Vcc = 2.7~5.5V) MIN. TYP. MAX. UNIT Read Cycle Time 55 -- -- 70 -- -- ns Address Access Time -- -- 55 -- -- 70 ns Chip Select Access Time -- -- 55 -- -- 70 ns Output Enable to Output Valid -- -- 30 -- -- 35 ns Chip Select to Output Low Z 10 -- -- 10 -- -- ns Output Enable to Output in Low Z 10 -- -- 10 -- -- ns Chip Deselect to Output in High Z -- -- 30 -- -- 35 ns Output Disable to Output in High Z -- -- 25 -- -- 30 ns Data Hold from Address Change 10 -- -- 10 -- -- ns SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t t t OH AA OH D OUT R0201-BS62LV4006 4 Revision 1.1 Jan. 2004 BSI READ CYCLE2 BS62LV4006 (1,3,4) CE t t (5) ACS t CHZ (5) CLZ D OUT READ CYCLE3 (1,4) t RC ADDRESS t AA OE t t CE OLZ t ACS t t OH OE t OHZ (5) t CHZ(1,5) (5) CLZ D OUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL . 5. The parameter is guaranteed but not 100% tested. R0201-BS62LV4006 5 Revision 1.1 Jan. 2004 BSI BS62LV4006 AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC ) WRITE CYCLE JEDEC PARAMETER NAME PARAMETER NAME CYCLE TIME : 55ns (Vcc = 3.0~5.5V) MIN. TYP. MAX. DESCRIPTION CYCLE TIME : 70ns (Vcc = 2.7~5.5V) MIN. TYP. MAX. UNIT t AVAX t WC Write Cycle Time 55 -- -- 70 -- -- ns t E1LWH t CW Chip Select to End of Write 55 -- -- 70 -- -- ns t AVWL t AS Address Set up Time 0 -- -- 0 -- -- ns t AVWH t AW Address Valid to End of Write 55 -- -- 70 -- -- ns t WLWH t WP Write Pulse Width 30 -- -- 35 -- -- ns t WHAX t WR Write Recovery Time 0 -- -- 0 -- -- ns t WLOZ t WHZ Write to Output in High Z -- -- 25 -- -- 30 ns t DVWH t DW Data to Write Time Overlap 25 -- -- 30 -- -- ns t WHDX t DH Data Hold from Write Time 0 -- -- 0 -- -- ns t GHOZ t OHZ Output Disable to Output in High Z -- -- 25 -- -- 30 ns t WHQX t OW End ot Write to Output Active 5 -- -- 5 -- -- ns (CE , WE) SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) t WC ADDRESS (3) t WR OE (11) t CW (5) CE t AW WE t WP t AS (2) (4,10) t OHZ D OUT t DH t DW D IN R0201-BS62LV4006 6 Revision 1.1 Jan. 2004 BSI BS62LV4006 WRITE CYCLE2 (1,6) t WC t CW ADDRESS (11) (5) CE t AW t WP (2) WE t AS (4,10) t t WHZ D OUT OW (7) (8) t DW t DH (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE going low to the end of write. R0201-BS62LV4006 7 Revision 1.1 Jan. 2004 BSI BS62LV4006 ORDERING INFORMATION BS62LV4006 X X Z YY SPEED 55: 55ns 70: 70ns PKG MATERIAL -: Normal G: Green P: Pb free GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE S: SOP E: TSOP 2 ST: Small TSOP T: TSOP P: PDIP Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments. PACKAGE DIMENSIONS WITH PLATING b c c1 BASE METAL b1 SECTION A-A SOP -32 R0201-BS62LV4006 8 Revision 1.1 Jan. 2004 BSI BS62LV4006 TSOP2 - 32 TSOP - 32 R0201-BS62LV4006 9 Revision 1.1 Jan. 2004 BSI BS62LV4006 PACKAGE DIMENSIONS (continued) STSOP - 32 PDIP - 32 R0201-BS62LV4006 10 Revision 1.1 Jan. 2004