BSI BD616LV4017DI-55

Very Low Power/Voltage CMOS SRAM
256K X 16 bit
BSI
BS616LV4017
„ FEATURES
• Wide Vcc operation voltage : 2.4~5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 26mA (@55ns) operating current
I-grade: 27mA (@55ns) operating current
C-grade: 21mA (@70ns) operating current
I-grade: 22mA (@70ns) operating current
0.45uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 63mA (@55ns) operating current
I-grade: 65mA (@55ns) operating current
C-grade: 53mA (@70ns) operating current
I-grade: 55mA (@70ns) operating current
2.0uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ DESCRIPTION
The BS616LV4017 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV4017 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4017 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
„ PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
POWER DISSIPATION
Operating
STANDBY
SPEED
( ns )
( I CCSB1 , Max )
PKG TYPE
( I CC , Max )
55ns :3.0~5.5V
70ns :2.7~5.5V
Vcc= 3.0V
2.4V ~ 5.5V
55 /70
5uA
30uA
21mA
53mA
2.4V ~ 5.5V
55 /70
10uA
60uA
22mA
55mA
Vcc= 5.0V
Vcc = 5.0V
Vcc =3.0V
70ns
70ns
BS616LV4017DC
BS616LV4017EC
DICE
O
O
+0 C to +70 C
BS616LV4017AC
BS616LV4017DI
BS616LV4017EI
BS616LV4017AI
O
O
-40 C to +85 C
„ BLOCK DIAGRAM
„ PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
BS616LV4017EC
BS616LV4017EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP2-44
BGA-48-0608
DICE
TSOP2-44
BGA-48-0608
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
A4
A3
A2
A1
Address
A0
A17
A16
A15
A14
A13
A12
Input
Buffer
22
2048
Row
Memory Array
Decoder
2048 x 2048
2048
16
DQ0
.
.
.
.
.
.
.
.
Data
Input
Buffer
16
Column I/O
Write Driver
Sense Amp
16
Data
Output
Buffer
DQ15
16
128
Column Decoder
14
CE
WE
OE
UB
LB
Control
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5
Vcc
Gnd
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV4017
1
Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ PIN DESCRIPTIONS
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 16-bit words in the RAM.
CE Chip Enable Input
CE is active LOW. Chip enables must be active when data read from or write to the
device. if chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0 - DQ15 Data Input/Output
Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
Not selected
(Power Down)
Output Disabled
Read
Write
R0201-BS616LV4017
CE
H
WE
OE
LB
UB
D0~D7
D8~D15
X
X
X
X
High Z
High Z
ICCSB , I CCSB1
X
X
X
H
H
High Z
L
L
X
H
X
H
H
X
H
X
High Z
High Z
High Z
High Z
ICCSB , I CCSB1
ICC
L
L
Dout
H
L
L
H
L
L
L
L
H
L
L
X
Vcc CURRENT
High Z
ICC
Dout
ICC
High Z
Dout
ICC
Dout
High Z
ICC
Din
Din
ICC
H
L
X
Din
ICC
L
H
Din
X
ICC
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Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
VTERM
Terminal Voltage
Respect to GND
with
TBIAS
Temperature Under Bias
-40 to +85
O
C
TSTG
Storage Temperature
-60 to +150
O
C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
AMBIENT
TEMPERATURE
RANGE
O
Commercial
0
Industrial
-40
O
C to +70
O
C to +85
Vcc
C
2.4V ~ 5.5V
OC
2.4V ~ 5.5V
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
SYMBOL
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CIN
CDQ
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not 100% tested.
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
TEST CONDITIONS
MIN. TYP.(1) MAX.
Guaranteed Input Low
Voltage (2)
Vcc=3.0V
Guaranteed Input High
Voltage (2)
Vcc=3.0V
2.0
Vcc=5.0V
2.2
-0.5
--
Vcc=5.0V
UNITS
0.8
V
0.8
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, V IN = 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE = V IH , or OE,= V IH
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, I OL = 2.0mA
--
--
0.4
V
Vcc=3.0V
Vcc=5.0V
VOH
ICC
Output High Voltage
(5)
Vcc = Min, I OH = -1.0mA
Operating Power
Supply Current
CE=VIL ,I DQ= 0mA,
Standby Current-TTL
CE = V IH, I DQ= 0mA
F=Fmax
Vcc=3.0V
2.4
Vcc=5.0V
2.4
70ns
Vcc=3.0V
70ns
Vcc=5.0V
(3)
--
--
--
--
--
(4)
Standby Current-CMOS
CE ≧ Vcc-0.2V,
V IN ≧ Vcc - 0.2V or VIN ≦0.2V
Vcc=3.0V
Vcc=5.0V
22
mA
0.5
Vcc=5.0V
ICCSB1
V
--
55
Vcc=3.0V
ICCSB
0.4
--
mA
1.0
0.45
10
2.0
60
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
4. IccSB1_MAX. is 5uA/30uA at Vcc=3.0V/5.0V and TA=70oC.
5. Icc_MAX. is 27mA(@3.0V)/65mA(@5.0V) under 55ns operation.
R0201-BS616LV4017
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Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
VDR
ICCDR
(3)
tCDR
tR
PARAMETER
TEST CONDITIONS
MIN. TYP.
Vcc for Data Retention
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
Chip Deselect to Data
Retention Time
See Retention Waveform
Operation Recovery Time
0
TRC
(2)
(1)
MAX.
UNITS
--
--
V
0.3
1.3
uA
--
--
ns
--
--
ns
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.8uA at TA=70OC.
O
„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
CE
R0201-BS616LV4017
Vcc
tR
t CDR
CE ≥ Vcc - 0.2V
VIH
4
VIH
Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ KEY TO SWITCHING WAVEFORMS
„AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
WAVEFORM
INPUTS
OUTPUTS
Input Rise and Fall Times
1V/ns
MUST BE
STEADY
MUST BE
STEADY
Input and Output
Timing Reference Level
0.5Vcc
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tRC
Read Cycle Time
70
--
--
55
--
--
ns
tAVQV
tAA
Address Access Time
--
--
70
--
--
55
ns
tELQV
tACS
Chip Select Access Time
--
--
70
--
--
55
ns
tBA
tBA (1)
Data Byte Control Access Time
--
--
35
--
--
30
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
35
--
--
30
ns
t E1LQX
tCLZ
Chip Select to Output Low Z
10
--
--
10
--
--
ns
tBE
tBE
Data Byte Control to Output Low Z
5
--
--
5
--
--
ns
tGLQX
tOLZ
Output Enable to Output in Low Z
5
--
--
5
--
--
ns
tEHQZ
tCHZ
Chip Deselect to Output in High Z
--
--
35
--
--
30
ns
tBDO
tBDO
Data Byte Control to Output High Z
--
--
35
--
--
30
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
30
--
--
25
ns
tAXOX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
CYCLE TIME : 70ns
DESCRIPTION
(LB,UB)
(LB,UB)
(LB,UB)
CYCLE TIME : 55ns
UNIT
(Vcc = 2.7~5.5V)
(Vcc = 3.0~5.5V)
MIN. TYP. MAX.
MIN. TYP. MAX.
NOTE :
1. tBA is 35ns/30ns (@speed=70ns/55ns) with address toggle. ; tBA is 70ns/55ns (@speed=70ns/55ns) without address toggle.
R0201-BS616LV4017
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Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ SWITCHING WAVEFORMS (READ CYCLE)
(1,2,4)
READ CYCLE1
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2
(1,3,4)
CE
t ACS
t BA
LB,UB
t BE
t
D OUT
READ CYCLE3
t BDO
(5)
t
(5)
CHZ
CLZ
(1,4)
t RC
ADDRESS
t
AA
OE
t OH
t OE
t OLZ
CE
(5)
t CLZ
t
t OHZ (5)
t CHZ(1,5)
ACS
t BA
LB,UB
t BE
t BDO
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV4017
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Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tE1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
t WC
t CW
t AS
t AW
t WP
t WR
t BW (1)
t WHZ
t DW
t DH
t OHZ
tWHOX
t OW
CYCLE TIME : 70ns
CYCLE TIME : 55ns
MIN. TYP. MAX.
MIN. TYP. MAX.
(Vcc = 3.0~5.5V)
(Vcc = 2.7~5.5V)
DESCRIPTION
UNIT
Write Cycle Time
70
--
--
55
--
--
ns
Chip Select to End of Write
70
--
--
55
--
--
ns
0
--
--
0
--
--
ns
Address Valid to End of Write
70
--
--
55
--
--
ns
Write Pulse Width
35
--
--
30
--
--
ns
0
--
--
0
--
--
ns
Address Setup Time
Write recovery Time
(CE,WE)
(LB,UB)
30
--
--
25
--
--
ns
--
--
30
--
--
25
ns
Data to Write Time Overlap
30
--
--
25
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
--
--
30
--
--
25
ns
End of Write to Output Active
5
--
--
5
--
--
ns
Date Byte Control to End of Write
Write to Output in High Z
NOTE :
1. tBW is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; tBW is 70ns/55ns (@speed=70ns/55ns) without address toggle.
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
(10)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
(3)
t WP
t AS
(2)
(4,11)
t OHZ
D OUT
t
DH
t DW
D IN
R0201-BS616LV4017
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Revision 2.1
Jan.
2004
BSI
BS616LV4017
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(10)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
t WR
t WP
(3)
(2)
t AS
(4,11)
t OW
t WHZ
D OUT
(7)
(8)
t DW
t
DH
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. TCW is measured from the later of CE going low to the end of write.
11. The parameter is guaranteed but not 100% tested.
R0201-BS616LV4017
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Revision 2.1
Jan.
2004
BSI
BS616LV4017
„ ORDERING INFORMATION
BS616LV4017 X X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
E: TSOP2-44
A: BGA-48-0608
D: DICE
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
„ PACKAGE DIMENSIONS
TSOP2-44
R0201-BS616LV4017
9
Revision 2.1
Jan.
2004
BSI
BS616LV4017
1.4 Max.
0.25 ± 0.05
„ PACKAGE DIMENSIONS (continued)
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
SIDE VIEW
D
0.1
D1
N
D
E
D1
E1
48
8.0
6.0
5.25
3.75
0.35± 0.05
E1
E ± 0.1
e
SOLDER BALL
VIEW A
48 mini-BGA (6 x 8mm)
R0201-BS616LV4017
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Revision 2.1
Jan.
2004