COMCHIP CFPA10MM

Glass Passivated Sintered Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CFPA10MM
Reverse Voltage: 2000 Volts
Forward Current: 1.0 Amp
Features
DO-214AC (SMA)
- Glass passivated cavity-free junction
- Ideal for surface mount automotive
application
- Plastic package has Underwriters Lab.
flammability classification 94V-0
- Built-in strain relief
- High temperature soldering guaranteed:
350 degree C/10sec, at terminals
- For use in high frequency rectifier circuits
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
0.180(4.57)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
Mechanical data
Case: JEDEC DO-214AC molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Weight:0.064 gram
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
Max.RepetitivePeak Reverse Voltage
V RRM
2000
V
Max. DC Blocking Voltage
V DC
2000
V
Max. RMS Voltage
V RMS
1400
V
Peak Surge Forward Current
8.3ms single half sine-wave
Sine-wave superimposed on
Rate load ( JEDEC )
I FSM
20
A
Max. AverageForward Current
Io
1.0
A
Max. Instantaneous Forward Current
at 1.0 A
VF
1.8
V
Reverse Recovery Time
Trr
500
nS
Max. DC Reverse Current at rated DC
Blocking Voltage
Ta=25 C
Ta=125 C
IR
CFPA10MM
Unit
uA
5
50
Max. Thermal Resistance (Note 1)
R
Operating Junction temperature
Tj
-55 to +175
C
Storage Temperature
T STG
-55 to +175
C
JA
65
C/W
Note 1: Thermal resistance from junction to ambient at 0.375 (9.5 mm) lead lengths, P.C. B. Mounted.
MDS0210025B
Page 1
Glass Passivated Sintered Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (CFPA10MM)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
10
Tj=125 C
10
1
Tj=25 C
Pulse width=300us
1% duty cycle
Forward Current ( A )
Reverse Current ( uA )
100
Tj=75 C
Tj=25 C
1.0
0.1
0.1
0.01
0.01
0.001
0
20
40
60
80
0.4
100
0.8
1.6
2.0
2.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
25
Peak Surge Forward Current ( A )
10
Junction Capacitance (pF)
1.2
6
Tj=25 C
4
2
8.3mS Single Half Sine
Wave JEDEC methode
20
15
Tj=25 C
10
5
0
1
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
10W
NONINDUCTIVE
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|
|
|
|
|
|
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+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0210025B
Page 2