SMD Fast Recovery Rectifier COMCHIP www.comchip.com.tw CFRM101 Thru CFRM107 Reverse Voltage: 50 - 1000 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S19500/228 Low leakage current MINI SMA 0.161(4.10) 0.146(3.70) 0.012(0.30) Typ. 0.071(1.80) 0.055(1.40) Mechanical data 0.110(2.80) 0.094(2.40) Case: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.063(1.60) 0.055(1.40) 0.035(0.90) Typ. 0.035(0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Symbol CFRM 101 CFRM 102 CFRM 103 CFRM 104 CFRM 105 CFRM 106 Max. Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Max. DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V V RMS 35 70 140 280 420 560 700 V Parameter Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) CFRM 107 Unit I FSM 30 A Max. Average Forward Current Io 1.0 A Max. Instantaneous Forward Current at 1.0 A VF 1.3 V Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 100 250 nS 5.0 50 uA 32 C/W C Typical. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 Storage Temperature T STG -55 to +150 JA 500 C Note 1: Thermal resistance from junction to ambient. MDS0208017B Page 1 SMD Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CFRM101 Thru CFRM107) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 100 Tj=125 C Forward Current ( A ) Reverse Current ( uA ) 1000 100 10 Tj=25 C 1.0 10 1 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 0 0.01 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Non repetitive Forward Surge Current =1MHz and applied 4VDC reverse voltage 30 50 Peak Surge Forward Current ( A ) Junction Capacitance (pF) 35 25 20 15 10 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 5 0 0 0.01 0.1 1.0 10 100 1 Reverse Voltage (V) 5 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 1.4 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1.2 1.0 0.8 0.6 0.4 Single Phase Half Wave 60Hz 0.2 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0208017B Page 2