SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw CSFB201 Thru CSFB205 Reverse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) 0.185(4.70) 0.160(4.06) 0.012(0.31) 0.006(0.15) Mechanical Data 0.096(2.44) 0.083(2.13) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Symbol CSFB 201 CSFB 202 CSFB 203 CSFB 204 CSFB 205 Unit Max. Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 V Max. DC Blocking Voltage V DC 50 100 200 400 600 V V RMS 35 70 140 280 420 V Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) I FSM Max. Average Forward Current Io Max. Instantaneous Forward Current at 2.0 A VF Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 50 A 2.0 A 0.95 1.3 35 50 V nS 5.0 100 uA 20 C/W C Max. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 Storage Temperature T STG -55 to +150 JL 1.5 C Note 1: Thermal resistance from junction to lead, 8.0x8.0 mm square (0.13 mm thick) land areas. MDS0210019B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CSFB201 Thru CSFB205) Fig. 1 - Reverse Characteristics Fig.2 - Forward Characteristics 1000 100 CSFB201-203 Forward current ( A ) Tj=125 C 100 Tj=75 C 10 Tj=25 C 1.0 CSFB204 10 1.0 CSFB205 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 0.01 0.1 0 20 40 60 80 100 120 0.4 140 0.6 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Non Repetitive Forward Surge Current 50 60 Peak surge Forward Current ( A ) f=1.0MHz Vsig=50mVp-p Junction Capacitance (pF) 0.8 40 30 20 Tj=25 C 10 8.3mS Single Half Sine Wave JEDEC methode 50 40 30 Tj=25 C 20 15 0 0.1 1.0 10 100 0 1000 1 5 10 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.8 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 2.4 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0210019B Page 2