SMD Efficient Fast Recovery Rectifier CEFL101-G Thru CEFL105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications DO-213AB (PLASTIC MELF) Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Built-in strain relief High surge current capability 0.022 (0.56) 0.205 (5.20) 0.018 (0.46) 0.185 (4.70) Mechanical Data: Case: JEDEC DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.116 gram 0.105 (2.67) 0.095 (2.41) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics: Parameter Symbol CEFL101-G CEFL102-G VRRM 50 100 200 400 600 V Max. DC Blocking Voltage VDC 50 100 200 400 600 V Max. RMS Voltage VRMS 35 70 140 280 420 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Max. Average Forward Current Io 1.0 A Max. Instantaneous Forward Voltage at 1.0A VF 0.875 1.1 1.25 V Reverse recovery time Trr 25 35 50 nS Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC IR Max. Repetitive Peak Reverse Voltage Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature R CEFL103-G CEFL104-G CEFL105-G Unit uA 5.0 250 50 JL o C/W Tj -55 to +155 o TSTG -55 to +125 oC C Note1: Thermal resistance from junction to lead 8.0mm square (0.13mm thick) land areas. “-G” suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFL101-G thru CEFL105-G) Fig. 1 - Reverse characteristics Fig.2 - Forward characteristics 10 100 3 Tj=25 C 0.1 1- 10 10 4 10 5 10 FL 0.1 0.01 Tj=25 C Pulse width 300uS 1% duty cycle 0.001 0.01 0 15 30 45 60 75 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.4 90 105 120 135 150 Forward Voltage (V) Percent of rated peak reverse voltage (%) Fig.4 - Non Repetitive Forward Surge Curre Fig. 3 - Junction Capacitance 35 50 Peak Surge Forward Current (A) f = 1 MHz and applied 4VDC reverse voltage 30 Junction Capacitance (pF) FL FL CE Tj=80 C 1 1.0 CE 10 CE Forward Current (A) Reverse current (mA) Tj=125 C 25 Tj=25 C 20 CEFL101-103 15 10 CEFL104 -105 5 8.3ms single half sine wave JEDEC method 40 30 Tj=25 C 20 10 0 0 0.01 0.1 1.0 10 1 100 5 10 50 Number of Cycles at 60Hz Reverse Voltage (V) Fig. 6 - Current derating curve Fig. 5 - Test circuit diagram and Reverse recovery time characteristics trr 10 NONINDUCTIVE ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1 NONINDUCTIVE 1.2 | | | | | | | | +0.5A 0 Average forward current ( A ) 50 NONINDUCTIVE -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 1 00 -1.0A 1.0 0.8 0.6 0.4 Single phase Half wave 60Hz 0.2 0 25 1cm SET TIME BASE FOR 50 75 100 125 150 175 Ambient temperature ( C) 50 / 10ns / cm “-G” suffix designates RoHS compliant Version www.comchiptech.com Page2