BCX 17, BCX 18 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Maße in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCX 17 BCX 18 Collector-Emitter-voltage B open - VCE0 45 V 25 V Collector-Base-voltage E open - VCB0 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (DC) - IC 500 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 1A Peak Base current – Basis-Spitzenstrom - IBM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 20 V - ICB0 – – 100 nA IE = 0, - VCB = 20 V, Tj = 150/C - ICB0 – – 5 :A - IEB0 – – 100 nA – – 620 mV Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V Collector saturation volt. – Kollektor-Sättigungsspg. 2) - IC = 500 mA, - IB = 50 mA 1 - VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 52 01.11.2003 General Purpose Transistors BCX 17, BCX 18 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 1 V, - IC = 100 mA hFE 100 – 600 - VCE = 1 V, - IC = 300 mA hFE 70 – – - VCE = 1 V, - IC = 500 mA hFE 40 – – - VBEon – – 1.2 V 80 MHz – – – 9 pF – Base-Emitter voltage – Basis-Emitter-Spannung 1) - VCE = 1 V, - IC = 500 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft CCB0 RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking – Stempelung 420 K/W 2) BCX 19, BCX 20 BCX 17 = T1 BCX 18 = T2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 53