MP03TT580 MP03TT580 Dual Thyristor Water Cooled Welding Module Preliminary Information DS5429-1.1 June 2001 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (Non Toxic) Isolation Medium ■ Integral Water Cooled Heatsink KEY PARAMETERS VDRM ILINE(cont.) ILINE(20cy./50%) ITSM(per arm) Visol G1 K1 K2 G2 2 1 APPLICATIONS ■ 1800V 600A 1008A 6800A 3000V 3 Fig. 1 Circuit diagram Welding VOLTAGE RATINGS Type Number MP03TT580-18 MP03TT580-17 MP03TT580-16 MP03TT580-15 Repetitive Peak Voltages VDRM VRRM V 1800 1700 1600 1500 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 30mA VDSM = VRSM = VDRM = VRRM + 100V respectively Lower voltage grades available Outline type code: MP03 - W1 or W2 Outline type code: MP03 - W3 or W4 ORDERING INFORMATION Order As: MP03TT580-XX W1 MP03TT580-XX W2 MP03TT580-XX W3 MP03TT580-XX W3A MP03TT580-XX W4 With 1/4 BSP connection 1/4 – 18 NPT connection 1/4 – 18 NPT connection 1/4 – 18 NPT water connection thread With 1/4 BSP connection XX shown in the part number about represents VDRM/100 selection required, e.g. MP03TT580-16-W3 Note: When ordering, please use the whole part number. Auxiliary gate and cathode leads can be ordered separately. Outline type code: MP03 - W3A (See package details for further information) Fig. 2 Electrical connections - (not to scale) 1/9 www.dynexsemi.com MP03TT580 ABSOLUTE MAXIMUM CURRENT RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol ILINE ITSM I2t ITSM I2t Visol Parameter Test Conditions Max. Units Max. controllable RMS line Continuous 50/60Hz Twater (in) = 25˚C 600 A current - single phase 4.5 Ltr/min Twater (in) = 40˚C 530 A 20 cycles, 50% duty cycle Twater (in) = 25˚C 1186 A 4.5 Ltr/min Twater (in) = 40˚C 1008 A 10ms half sine, Tj = 125˚C 6.8 kA VR = 0 231x103 A2s 10ms half sine, Tj = 125˚C 5.5 kA VR = 50% VDRM 150x103 A2s 3000 V Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage THERMAL AND MECHANICAL RATINGS Parameter Symbol Rth(j-w) Max. Units dc, 4.5 Ltr/min - 0.24 ˚C/kW (per thyristor) Half wave, 4.5 Ltr/min - 0.25 ˚C/kW 3 Phase, 4.5 Ltr/min - 0.26 ˚C/kW Reverse (blocking) - 125 ˚C –40 125 ˚C Mounting - M6 5(44) - Nm (lb.ins) Electrical connections - M4 8(70) 9(80) Nm (lb.ins) - Refer to drawings g Virtual junction temperature Tstg Storage temperature range - Min. Thermal resistance - junction to water Tvj - Test Conditions Screw torque Weight (nominal) - - 2/9 www.dynexsemi.com MP03TT580 DYNAMIC CHARACTERISTICS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tj = 125˚C - 300 mA dV/dt Linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 500A, gate source 10V, 5Ω - 150 A/µs IRRM/IDRM tr = 0.5µs, Tj = 125˚C VT(TO) rT Threshold voltage At Tvj = 125˚C - 0.98 V On-state slope resistance At Tvj = 125˚C - 0.75 mΩ Note : The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 5 100 W PG(AV) Mean gate power 5 W - - 3/9 www.dynexsemi.com MP03TT580 20 2000 Peak half sine wave on-state current - (kA) 15 1500 180 I2t 10 1000 Tj = 125˚C 500 0 0.5 2.5 1.5 1.0 2.0 Instantaneous on-state voltage, VT - (V) 140 5 100 0 1 10 1 ms 2 3 45 10 I2t value - A2s x 103 Instantaneous on-state current, IT - (A) Measured under pulse conditions 60 20 30 50 cycles at 50Hz Duration Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRSM at Tcase = 125˚C) 100 Gate trigger voltage, VGT - (V) Tj = -40˚C Tj = 25˚C Tj = 125˚C 1.0 p Up VGD 0.1 0.001 l er im it 9 9% Lo r we lim it 1% 0.01 0.1 1.0 Gate trigger current, IGT - (A) Fig. 5 Gate characteristics DC thermal resistance, junction to case, Rth(j-c) - (°C/W) 0.25 Pulse width Frequency Hz Table gives pulse power PGM in Watts µs 50 100 400 20 100 100 100 75W 100W VFGM 25 100 100 100 50W 100 100 100 100 500 100 100 25 10W 1ms 100 50 10 5W 10ms 10 - - 0.20 0.15 0.10 0.05 10 IFGM 0 0.001 0.01 0.1 1 10 Time (Seconds) 100 1000 Fig. 6 Transient thermal impedance - dc 4/9 www.dynexsemi.com MP03TT580 3000 3500 Rms line current - (A rms) 3000 2500 2000 1500 1000 2000 1500 1000 500 500 Tj = 125˚C, Twater = 30˚C @ 4.5 Ltrs/min Tj = 125˚C, Twater = 25˚C @ 4.5 Ltrs/min 0 0 1 10 Duty cycle - (%) 1 100 Fig. 7 Single phase welding rating @Twater = 25˚C 10 Duty cycle - (%) 100 Fig. 8 Single phase welding rating @Twater = 30˚C 2500 3000 2000 1500 1000 No. of cycles 1 3 5 10 20 30 50 100 2000 Rms line current - (A rms) No. of cycles 1 3 5 10 20 30 50 100 2500 Rms line current - (A rms) No. of cycles 1 3 5 10 20 30 50 100 2500 Rms line current - (A rms) No. of cycles 1 3 5 10 20 30 50 100 1500 1000 500 500 Tj = 125˚C, Twater = 50˚C @ 4.5 Ltrs/min Tj = 125˚C, Twater = 40˚C @ 4.5 Ltrs/min 0 1 10 Duty cycle - (%) Fig. 9 Single phase welding rating @Twater = 40˚C 100 0 1 10 Duty cycle - (%) 100 Fig. 10 Single phase welding rating @Twater = 50˚C 5/9 www.dynexsemi.com MP03TT580 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28.5 35 42.5 5 Ø5.5 5 K2 50 3 38 2 1 18 6.5 G2 G1 5 K1 Fast on tabs 2.8 x 0.8 80 92 M8 61 41 19 Thread size: W1 : 1/4 BSP connection W2 : 1/4 – 18 NPT connection 25 27.5 37 Recommended fixings for mounting: M5 socket head cap screws Nominal weight: 1100g Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. Module outline type code: MP03-W1 and W2 6/9 www.dynexsemi.com MP03TT580 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28.5 35 42.5 5 Ø5.5 5 K2 50 3 38 2 1 18 6.5 G2 G1 5 K1 Fast on tabs 2.8 x 0.8 80 92 M8 61 41 9 19 27.5 37 Thread size: W3 : 1/4 – 18 NPT connection W4 : 1/4 BSP connection Recommended fixings for mounting: M5 socket head cap screws Nominal weight: 1100g Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. Module outline type code: MP03-W3 and W4 7/9 www.dynexsemi.com MP03TT580 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 42.5 35 28.5 5 1 K1 6.5 2 3 K2 G2 G1 5 18 38 50 5 Ø5.5 Fast on tabs 2.8 x 0.8 80 92 20.6 50.8 25.4 Thread size: W3A : 1/4 – 18 NPT connection thread 10.37 47.4 67.4 M8 Recommended fixings for mounting: M5 socket head cap screws Nominal weight: 1300g Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. Module outline type code: MP03-W3A 8/9 www.dynexsemi.com MP03TT580 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5429-1 Issue No. 1.1 June 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com